ZrO2-HfO2Superlattice Ferroelectric Capacitors with Optimized Annealing to Achieve Extremely High Polarization Stability

Yan Kui Liang, Wei Li Li, Yong Jyun Wang, Li Chi Peng, Chun Chieh Lu, Huai Ying Huang, Sai Hooi Yeong, Yu Ming Lin, Ying Hao Chu, Edward Yi Chang, Chun Hsiung Lin*

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

The ferroelectric polarization stability and dielectric characteristics of ZrO2-HfO2 superlattice (SL) ferroelectric layer Metal-Ferroelectric-Metal (MFM) capacitor fabricated with various post-metal annealing (PMA) temperatures were presented. It was demonstrated that ZrO2-HfO2 SL MFM capacitors with increased post metallization PMA temperature (i.e., 600 °C) showed improved polarization stability with almost wake-up free and polarization fatigue free characteristics. In this work, we have shown that highly stable remanent polarization (2Pr@ 3MV $/$ cm) of $30 ~\mu \text{C}/$ cm2 with small variation ( $\Delta 2\text{P}_{r} \le 2 ~\mu \text{C}/$ cm2; $\Delta 2\text{P}_{r} / 2\text{P}_{r,pristine} \le9$ %) up to 1011 cycles of field cycling were exhibited by the atomic layer deposition (ALD) deposited ZrO2-HfO2 superlattice with 600 °C PMA. To our knowledge, the nearly 'wake-up'-free and fatigue-free polarization behavior up to 1011 cycles are among the best polarization stability for the hafnium zirconium oxide based MFM capacitors sustained endurance tests for more than 1010 cycles.

原文English
頁(從 - 到)1451-1454
頁數4
期刊Ieee Electron Device Letters
43
發行號9
DOIs
出版狀態Published - 1 9月 2022

指紋

深入研究「ZrO2-HfO2Superlattice Ferroelectric Capacitors with Optimized Annealing to Achieve Extremely High Polarization Stability」主題。共同形成了獨特的指紋。

引用此