ZrN-Based Flexible Resistive Switching Memory

Dayanand Kumar; Umesh Chand; Lew Wen Siang; Tseung-Yuen Tseng

doi:10.1109/LED.2020.2981529

ZrN-Based Flexible Resistive Switching Memory

Dayanand Kumar, Umesh Chand, Lew Wen Siang, Tseung-Yuen Tseng^*

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

23 引文斯高帕斯（Scopus）

摘要

In this letter, ZrN-based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room-temperature fabrication process, the device is suitable for low-temperature flexible monolithic technologies. The TiN/ZrN/TiN device exhibits excellent AC endurance cycling (10⁷), a rapid speed (45 ns) and stable retention (10⁴ s) at 100°C without any degradation. In addition, RRAM devices built with an additional HfN interface layer exhibit small operational voltage variations and stable switching characteristics. The flexibility of the device is excellent, and it maintains excellent electrical characteristics at a bending radius of up to 4 mm.

原文	English
文章編號	9039564
頁（從 - 到）	705-708
頁數	4
期刊	IEEE Electron Device Letters
卷	41
發行號	5
DOIs	https://doi.org/10.1109/LED.2020.2981529
出版狀態	Published - 3月 2020

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title = "ZrN-Based Flexible Resistive Switching Memory",

abstract = "In this letter, ZrN-based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room-temperature fabrication process, the device is suitable for low-temperature flexible monolithic technologies. The TiN/ZrN/TiN device exhibits excellent AC endurance cycling (107), a rapid speed (45 ns) and stable retention (104 s) at 100°C without any degradation. In addition, RRAM devices built with an additional HfN interface layer exhibit small operational voltage variations and stable switching characteristics. The flexibility of the device is excellent, and it maintains excellent electrical characteristics at a bending radius of up to 4 mm.",

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author = "Dayanand Kumar and Umesh Chand and Siang, {Lew Wen} and Tseung-Yuen Tseng",

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N2 - In this letter, ZrN-based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room-temperature fabrication process, the device is suitable for low-temperature flexible monolithic technologies. The TiN/ZrN/TiN device exhibits excellent AC endurance cycling (107), a rapid speed (45 ns) and stable retention (104 s) at 100°C without any degradation. In addition, RRAM devices built with an additional HfN interface layer exhibit small operational voltage variations and stable switching characteristics. The flexibility of the device is excellent, and it maintains excellent electrical characteristics at a bending radius of up to 4 mm.

AB - In this letter, ZrN-based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room-temperature fabrication process, the device is suitable for low-temperature flexible monolithic technologies. The TiN/ZrN/TiN device exhibits excellent AC endurance cycling (107), a rapid speed (45 ns) and stable retention (104 s) at 100°C without any degradation. In addition, RRAM devices built with an additional HfN interface layer exhibit small operational voltage variations and stable switching characteristics. The flexibility of the device is excellent, and it maintains excellent electrical characteristics at a bending radius of up to 4 mm.

KW - conductive filament

KW - nitrogen ions

KW - resistive switching

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ZrN-Based Flexible Resistive Switching Memory

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