Yield improvement of gadolinium oxide resistive switching memory with oxygen post-metallization annealing

Jer Chyi Wang; Chao Sung Lai; De Yuan Jian; Yu Ren Ye

doi:10.1109/ISNE.2013.6512376

Yield improvement of gadolinium oxide resistive switching memory with oxygen post-metallization annealing

Jer Chyi Wang, Chao Sung Lai, De Yuan Jian, Yu Ren Ye

前瞻半導體研究所

研究成果 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Different post-metallization annealing gas ambient has been performed in the gadolinium oxide resistive switching memories to enhance the fabrication yield. The superior memory properties such as the low set and reset voltages (-1.4 V and 2.1 V) and high resistance ratio (∼10⁴) are successfully achieved. With no degradation of the memory characteristics, the fabrication yield of the oxygen post-metallization annealed gadolinium oxide resistive switching memories can be increased to over 60% due to the sufficient mobile oxygen ions supplied in the gadolinium oxide layers.

原文	English
頁面	393-395
頁數	3
DOIs	https://doi.org/10.1109/ISNE.2013.6512376
出版狀態	Published - 2013
事件	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, 台灣持續時間: 25 2月 2013 → 26 2月 2013

Conference

Conference	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
國家/地區	台灣
城市	Kaohsiung
期間	25/02/13 → 26/02/13

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10.1109/ISNE.2013.6512376

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title = "Yield improvement of gadolinium oxide resistive switching memory with oxygen post-metallization annealing",

abstract = "Different post-metallization annealing gas ambient has been performed in the gadolinium oxide resistive switching memories to enhance the fabrication yield. The superior memory properties such as the low set and reset voltages (-1.4 V and 2.1 V) and high resistance ratio (∼104) are successfully achieved. With no degradation of the memory characteristics, the fabrication yield of the oxygen post-metallization annealed gadolinium oxide resistive switching memories can be increased to over 60% due to the sufficient mobile oxygen ions supplied in the gadolinium oxide layers.",

author = "Wang, {Jer Chyi} and Lai, {Chao Sung} and Jian, {De Yuan} and Ye, {Yu Ren}",

year = "2013",

doi = "10.1109/ISNE.2013.6512376",

language = "English",

pages = "393--395",

note = "2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 ; Conference date: 25-02-2013 Through 26-02-2013",

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AU - Wang, Jer Chyi

AU - Lai, Chao Sung

AU - Jian, De Yuan

AU - Ye, Yu Ren

PY - 2013

Y1 - 2013

N2 - Different post-metallization annealing gas ambient has been performed in the gadolinium oxide resistive switching memories to enhance the fabrication yield. The superior memory properties such as the low set and reset voltages (-1.4 V and 2.1 V) and high resistance ratio (∼104) are successfully achieved. With no degradation of the memory characteristics, the fabrication yield of the oxygen post-metallization annealed gadolinium oxide resistive switching memories can be increased to over 60% due to the sufficient mobile oxygen ions supplied in the gadolinium oxide layers.

AB - Different post-metallization annealing gas ambient has been performed in the gadolinium oxide resistive switching memories to enhance the fabrication yield. The superior memory properties such as the low set and reset voltages (-1.4 V and 2.1 V) and high resistance ratio (∼104) are successfully achieved. With no degradation of the memory characteristics, the fabrication yield of the oxygen post-metallization annealed gadolinium oxide resistive switching memories can be increased to over 60% due to the sufficient mobile oxygen ions supplied in the gadolinium oxide layers.

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U2 - 10.1109/ISNE.2013.6512376

DO - 10.1109/ISNE.2013.6512376

M3 - Paper

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T2 - 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013

Y2 - 25 February 2013 through 26 February 2013

ER -

Yield improvement of gadolinium oxide resistive switching memory with oxygen post-metallization annealing

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