X-ray interference measurement of ultrathin semiconductor layers

C. R. Wie*, Jyh-Cheng Chen, H. M. Kim, P. L. Liu, Y. W. Choi, D. M. Hwang


研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)


We have characterized, using the interference structure in x-ray rocking curves, a single or double strained GaInP layer grown on an InP substrate. The measured GaInP layer thicknesses are 9±3 Å and 107±3 Å for the single strained layer samples and 7 Å/50 Å and 32 Å/32 Å for the double strained layer samples. The rocking curve results for the 107 Å single-barrier sample and the 7 Å/50 Å double-barrier sample agreed well with the cross-section transmission electron microscopy data and the secondary-ion mass spectrometry data. The x-ray interference structure for the single strained barrier samples indicates the existence of many half-monolayer steps within the 1×1 mm2 x-ray beam spot at each GaInP/InP interface.

頁(從 - 到)1774-1776
期刊Applied Physics Letters
出版狀態Published - 1 12月 1989


深入研究「X-ray interference measurement of ultrathin semiconductor layers」主題。共同形成了獨特的指紋。