X-ray interference measurement of ultrathin semiconductor layers

C. R. Wie; Jyh-Cheng Chen; H. M. Kim; P. L. Liu; Y. W. Choi; D. M. Hwang

doi:10.1063/1.102189

X-ray interference measurement of ultrathin semiconductor layers

C. R. Wie^*, Jyh-Cheng Chen, H. M. Kim, P. L. Liu, Y. W. Choi, D. M. Hwang

^*此作品的通信作者

網路工程研究所

研究成果: Article › 同行評審

23 引文斯高帕斯（Scopus）

摘要

We have characterized, using the interference structure in x-ray rocking curves, a single or double strained GaInP layer grown on an InP substrate. The measured GaInP layer thicknesses are 9±3 Å and 107±3 Å for the single strained layer samples and 7 Å/50 Å and 32 Å/32 Å for the double strained layer samples. The rocking curve results for the 107 Å single-barrier sample and the 7 Å/50 Å double-barrier sample agreed well with the cross-section transmission electron microscopy data and the secondary-ion mass spectrometry data. The x-ray interference structure for the single strained barrier samples indicates the existence of many half-monolayer steps within the 1×1 mm² x-ray beam spot at each GaInP/InP interface.

原文	English
頁（從 - 到）	1774-1776
頁數	3
期刊	Applied Physics Letters
卷	55
發行號	17
DOIs	https://doi.org/10.1063/1.102189
出版狀態	Published - 1 12月 1989

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title = "X-ray interference measurement of ultrathin semiconductor layers",

abstract = "We have characterized, using the interference structure in x-ray rocking curves, a single or double strained GaInP layer grown on an InP substrate. The measured GaInP layer thicknesses are 9±3 {\AA} and 107±3 {\AA} for the single strained layer samples and 7 {\AA}/50 {\AA} and 32 {\AA}/32 {\AA} for the double strained layer samples. The rocking curve results for the 107 {\AA} single-barrier sample and the 7 {\AA}/50 {\AA} double-barrier sample agreed well with the cross-section transmission electron microscopy data and the secondary-ion mass spectrometry data. The x-ray interference structure for the single strained barrier samples indicates the existence of many half-monolayer steps within the 1×1 mm2 x-ray beam spot at each GaInP/InP interface.",

author = "Wie, {C. R.} and Jyh-Cheng Chen and Kim, {H. M.} and Liu, {P. L.} and Choi, {Y. W.} and Hwang, {D. M.}",

year = "1989",

month = dec,

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doi = "10.1063/1.102189",

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T1 - X-ray interference measurement of ultrathin semiconductor layers

AU - Wie, C. R.

AU - Chen, Jyh-Cheng

AU - Kim, H. M.

AU - Liu, P. L.

AU - Choi, Y. W.

AU - Hwang, D. M.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - We have characterized, using the interference structure in x-ray rocking curves, a single or double strained GaInP layer grown on an InP substrate. The measured GaInP layer thicknesses are 9±3 Å and 107±3 Å for the single strained layer samples and 7 Å/50 Å and 32 Å/32 Å for the double strained layer samples. The rocking curve results for the 107 Å single-barrier sample and the 7 Å/50 Å double-barrier sample agreed well with the cross-section transmission electron microscopy data and the secondary-ion mass spectrometry data. The x-ray interference structure for the single strained barrier samples indicates the existence of many half-monolayer steps within the 1×1 mm2 x-ray beam spot at each GaInP/InP interface.

AB - We have characterized, using the interference structure in x-ray rocking curves, a single or double strained GaInP layer grown on an InP substrate. The measured GaInP layer thicknesses are 9±3 Å and 107±3 Å for the single strained layer samples and 7 Å/50 Å and 32 Å/32 Å for the double strained layer samples. The rocking curve results for the 107 Å single-barrier sample and the 7 Å/50 Å double-barrier sample agreed well with the cross-section transmission electron microscopy data and the secondary-ion mass spectrometry data. The x-ray interference structure for the single strained barrier samples indicates the existence of many half-monolayer steps within the 1×1 mm2 x-ray beam spot at each GaInP/InP interface.

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U2 - 10.1063/1.102189

DO - 10.1063/1.102189

M3 - Article

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EP - 1776

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

ER -

X-ray interference measurement of ultrathin semiconductor layers

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