X-ray interference measurement of ultrathin semiconductor layers

C. R. Wie*, Jyh-Cheng Chen, H. M. Kim, P. L. Liu, Y. W. Choi, D. M. Hwang

*此作品的通信作者

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

摘要

We have characterized, using the interference structure in x-ray rocking curves, a single or double strained GaInP layer grown on an InP substrate. The measured GaInP layer thicknesses are 9±3 Å and 107±3 Å for the single strained layer samples and 7 Å/50 Å and 32 Å/32 Å for the double strained layer samples. The rocking curve results for the 107 Å single-barrier sample and the 7 Å/50 Å double-barrier sample agreed well with the cross-section transmission electron microscopy data and the secondary-ion mass spectrometry data. The x-ray interference structure for the single strained barrier samples indicates the existence of many half-monolayer steps within the 1×1 mm2 x-ray beam spot at each GaInP/InP interface.

原文English
頁(從 - 到)1774-1776
頁數3
期刊Applied Physics Letters
55
發行號17
DOIs
出版狀態Published - 1 12月 1989

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