TY - GEN
T1 - WKB model of ferroelectric tunnel junctions for memory applications
T2 - 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024
AU - Jagga, Deepali
AU - De, Sourav
AU - Useinov, Artur
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - In this article, the metal-ferroelectric-metal tunnel junctions (FTJ) are simulated to study the device's performance. An enhanced model, based on the Wentzel-Kramers-Brillouin (WKB) approach, has been proposed. Its results are successfully verified with experimental data, the model features embedded V -dependent interfacial screening, magnetic spin degree of freedom, electric hysteresis, and electrostriction effect for the multi-domain barrier.
AB - In this article, the metal-ferroelectric-metal tunnel junctions (FTJ) are simulated to study the device's performance. An enhanced model, based on the Wentzel-Kramers-Brillouin (WKB) approach, has been proposed. Its results are successfully verified with experimental data, the model features embedded V -dependent interfacial screening, magnetic spin degree of freedom, electric hysteresis, and electrostriction effect for the multi-domain barrier.
KW - electrostriction effect
KW - ferroelectric
KW - multi-domain barrier
KW - screening
KW - tunneling electroresistance
UR - http://www.scopus.com/inward/record.url?scp=85193234293&partnerID=8YFLogxK
U2 - 10.1109/EDTM58488.2024.10512202
DO - 10.1109/EDTM58488.2024.10512202
M3 - Conference contribution
AN - SCOPUS:85193234293
T3 - IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024
BT - IEEE Electron Devices Technology and Manufacturing Conference
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 3 March 2024 through 6 March 2024
ER -