WKB Approach for Ferroelectric Tunnel Junctions with Thomas-Fermi Voltage Dependent Screening and Electrostriction Effect

Deepali Jagga, Artur Useinov

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

The article proposes a dynamic compact model for a CMOS-compatible ferroelectric tunnel junction (FTJ) with different thicknesses of the Hf0.5Zr0.5O2 tunneling barrier. The model is based on the Wentzel-Kramers-Brillouin (WKB) approach to the point-contact model and incorporates the Thomas-Fermi interfacial screening and electrostriction effect. The tunnel junctions of type: metal-ferroelectric-metal and metal-ferroelectric-semiconductor are simulated to study their device's current density and tunneling electroresistance. The model is extensively verified with experimental data, highlighting the impact of voltage-controlled interfacial screening, and electrostriction effect on the device performance as the uniqueness of this work.

原文English
主出版物標題2023 3rd Asian Conference on Innovation in Technology, ASIANCON 2023
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350302288
DOIs
出版狀態Published - 2023
事件3rd IEEE Asian Conference on Innovation in Technology, ASIANCON 2023 - Ravet, India
持續時間: 25 8月 202327 8月 2023

出版系列

名字2023 3rd Asian Conference on Innovation in Technology, ASIANCON 2023

Conference

Conference3rd IEEE Asian Conference on Innovation in Technology, ASIANCON 2023
國家/地區India
城市Ravet
期間25/08/2327/08/23

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