Wide range work function modulation of binary alloys for MOSFET application

Bing-Yue Tsui*, Chih Feng Huang

*此作品的通信作者

    研究成果: Letter同行評審

    109 引文 斯高帕斯(Scopus)

    摘要

    This paper explores the characteristics of the binary alloys Ta-Pt and Ta-Ti for gate electrode application. With a proper composition of high and low work function metals, the work function of the metal alloys can be modulated from 4.16 eV to 5.05 eV continuously. The alloys show good thermal stability and inner chemical activity on both silicon dioxide and hafnium dioxide. Thermal stress generated from the alloy film increases interface state density and hence effective oxide charges. This problem can be greatly reduced with W/Ta-Pt stack structure, where W acts as the main conducting metal and Ta-Pt acts as work function control metal. All of these properties make them suitable for use in all device applications.

    原文English
    頁(從 - 到)153-155
    頁數3
    期刊IEEE Electron Device Letters
    24
    發行號3
    DOIs
    出版狀態Published - 1 三月 2003

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