摘要
A whole-chip ESD protection scheme with the ESD-connection diodes and a substrate-triggering field-oxide device (STFOD) are proposed to protect mixed-mode CMOS IC's against ESD damage. The STFOD is triggered on by the substrate-triggering technique to make an area-efficient VDD-to-VSS ESD clamp circuit. The ESD-connection diodes provide the current discharging paths among the multiple separated power lines to avoid the ESD damage located at the digital-analog interface. This whole-chip ESD protection scheme has been practically verified in an 8-bits DAC chip in a 0.6-μm CMOS process with a pin-to-pin ESD robustness of above 4 KV.
原文 | English |
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頁(從 - 到) | 31-34 |
頁數 | 4 |
期刊 | Proceedings of the Custom Integrated Circuits Conference |
DOIs | |
出版狀態 | Published - 1997 |
事件 | Proceedings of the 1997 IEEE Custom Integrated Circuits Conference - Santa Clara, CA, USA 持續時間: 5 5月 1997 → 8 5月 1997 |