Well-posedness of the hydrodynamic model for semiconductors

Li-Ming Yeh*

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

This paper concerns the well-posedness of the hydrodynamic model for semiconductor devices, a quasilinear elliptic-parbolic-hyperbolic system. Boundary conditions for elliptic and parabolic equations are Dirichlet conditions while boundary conditions for the hyperbolic equations are assumed to be well-posed in L2 sense. Maximally strictly dissipative boundary conditions for the hyperbolic equations satisfy the assumption of well-posedness in L2 sense. The well-posedness of the model under the boundary conditions is demonstrated.

原文English
頁(從 - 到)1489-1507
頁數19
期刊Mathematical Methods in the Applied Sciences
19
發行號18
DOIs
出版狀態Published - 12月 1996

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