Well-behaved Ge n+/p shallow junction achieved by plasma immersion ion implantation

Yi Ju Chen*, Hsiu Hsien Liao, Bing-Yue Tsui, Yao Jen Lee, Chih Jen Wang, Po Jung Sung

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Ge n+/p junctions fabricated by conventional ion implantation (CII) and plasma immersion ion implantation (PIII) are compared in this work. To achieve low junction leakage current, PIII-implanted Ge n+/p junctions require higher annealing temperature to eliminate the Shockley-Read-Hall generation current, which may be contributed to the residual hydrogen and hydrogen-related defects. It is demonstrated that with 500 °C annealing, well-behaved Ge n+/p junction with ultra-shallow junction depth (<50 nm) can be achieved by PIII. With 600 °C annealing, best Ge n+/p junction performance with current on/off ratio ~9 × 105 and ideality factor ~1.07 is achieved by PIII.

原文English
文章編號109528
期刊Vacuum
180
DOIs
出版狀態Published - 10月 2020

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