Wafer-scale MOCVD grown WS2 with normally off transistor behavior and its general application on different amorphous substrates

Wen Chia Wu, Kuan Ning Huang, Chien Ying Su, Chi Chung Kei, Cheng Huang Kuo, Chao Hsin Chien*

*此作品的通信作者

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摘要

In this study, we investigated various approaches to manipulate the flake density, size, and thickness of two-dimensional transition metal dichalcogenides by independently tuning the precursors and process conditions of the metal-organic chemical vapor deposition system. Normally off device characteristics were realized for both the as-grown and transferred cases.

原文English
文章編號183101
期刊Applied Physics Letters
123
發行號18
DOIs
出版狀態Published - 30 10月 2023

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