Wafer bonding of 50 mm diameter mirror substrate to algainp light-emitting diode wafer

C. H. Seieh; Ray-Hua Horng; M. F. Huang; D. S. Wuu; W. C. Peng; S. J. Tsai; J. S. Liu

doi:10.1109/LEOS.2000.894123

Wafer bonding of 50 mm diameter mirror substrate to algainp light-emitting diode wafer

C. H. Seieh
, Ray-Hua Horng
, M. F. Huang
, D. S. Wuu
, W. C. Peng
, S. J. Tsai
, J. S. Liu

電子研究所

研究成果: Article › 同行評審

摘要

The feasibility of 50-mm wafer bonding AlGaInP/LED with mirror substrate is demonstrated using a bonding process under a low temperature and short thermal treatment duration. Si substrate with good thermal conductivity is used as the mirror substrate to prevent LED device from joule heating. The performance of the mirror substrate AlGaInP LED is much better than that of the absorbing substrate LED.

原文	English
頁（從 - 到）	854-855
頁數	2
期刊	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
卷	2
DOIs	https://doi.org/10.1109/LEOS.2000.894123
出版狀態	Published - 2000

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10.1109/LEOS.2000.894123

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title = "Wafer bonding of 50 mm diameter mirror substrate to algainp light-emitting diode wafer",

abstract = "The feasibility of 50-mm wafer bonding AlGaInP/LED with mirror substrate is demonstrated using a bonding process under a low temperature and short thermal treatment duration. Si substrate with good thermal conductivity is used as the mirror substrate to prevent LED device from joule heating. The performance of the mirror substrate AlGaInP LED is much better than that of the absorbing substrate LED.",

author = "Seieh, \{C. H.\} and Ray-Hua Horng and Huang, \{M. F.\} and Wuu, \{D. S.\} and Peng, \{W. C.\} and Tsai, \{S. J.\} and Liu, \{J. S.\}",

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doi = "10.1109/LEOS.2000.894123",

language = "English",

volume = "2",

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T1 - Wafer bonding of 50 mm diameter mirror substrate to algainp light-emitting diode wafer

AU - Seieh, C. H.

AU - Horng, Ray-Hua

AU - Huang, M. F.

AU - Wuu, D. S.

AU - Peng, W. C.

AU - Tsai, S. J.

AU - Liu, J. S.

PY - 2000

Y1 - 2000

N2 - The feasibility of 50-mm wafer bonding AlGaInP/LED with mirror substrate is demonstrated using a bonding process under a low temperature and short thermal treatment duration. Si substrate with good thermal conductivity is used as the mirror substrate to prevent LED device from joule heating. The performance of the mirror substrate AlGaInP LED is much better than that of the absorbing substrate LED.

AB - The feasibility of 50-mm wafer bonding AlGaInP/LED with mirror substrate is demonstrated using a bonding process under a low temperature and short thermal treatment duration. Si substrate with good thermal conductivity is used as the mirror substrate to prevent LED device from joule heating. The performance of the mirror substrate AlGaInP LED is much better than that of the absorbing substrate LED.

UR - https://www.scopus.com/pages/publications/0034475725

U2 - 10.1109/LEOS.2000.894123

DO - 10.1109/LEOS.2000.894123

M3 - Article

AN - SCOPUS:0034475725

SN - 1092-8081

VL - 2

SP - 854

EP - 855

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

ER -

Wafer bonding of 50 mm diameter mirror substrate to algainp light-emitting diode wafer

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