Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers

Po Chun Liu, Chin Yuan Hou, Yew-Chuhg Wu*

*此作品的通信作者

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

A direct wafer-bonding technique has been used to fabricate high-brightness light emitting diodes (LEDs). However, bonding processes were usually performed at elevated temperatures, possibly causing degradation in the quality of the LED structure. In addition to this, misorientation between the two bonded wafers may have caused defects between the wafers. In this study, these two problems were solved by bonding the InGaP/GaAs and GaAs wafers with an indium tin oxide (ITO) polycrystalline film at temperatures below 650 °C. It was found that the bonding occurred mainly through the In transport from the InGaP to ITO, and that the electrical resistance decreased with the bonding temperature.

原文English
頁(從 - 到)280-285
頁數6
期刊Thin Solid Films
478
發行號1-2
DOIs
出版狀態Published - 1 5月 2005

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