Wafer bonding by Ni-induced crystallization of amorphous silicon was investigated. It was found that wafers can be bonded through the crystallization of amorphous silicon at temperatures below 550°C. Moreover, when 250 V was applied across the stacked samples, the bonding temperatures could be decreased to as low as 350°C.
|頁（從 - 到）||5527-5530|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 9月 2003|