Wafer bonding by Ni-induced crystallization of amorphous silicon

Chun Ping Chao, Yew-Chuhg Wu*, Tzu Ling Lee, Yuh Huah Wang

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Wafer bonding by Ni-induced crystallization of amorphous silicon was investigated. It was found that wafers can be bonded through the crystallization of amorphous silicon at temperatures below 550°C. Moreover, when 250 V was applied across the stacked samples, the bonding temperatures could be decreased to as low as 350°C.

原文English
頁(從 - 到)5527-5530
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
發行號9 A
DOIs
出版狀態Published - 9月 2003

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