Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications

P. J. Sung, C. Y. Chang, L. Y. Chen, K. H. Kao, C. J. Su, T. H. Liao, C. C. Fang, C. J. Wang, T. C. Hong, C. Y. Jao, H. S. Hsu, S. X. Luo, Y. S. Wang, H. F. Huang, J. H. Li, Y. C. Huang, F. K. Hsueh, C. T. Wu, Y. M. Huang, F. J. HouG. L. Luo, Y. C. Huang, Y. L. Shen, W. C.Y. Ma, K. P. Huang, K. L. Lin, S. Samukawa, Y. Li, G. W. Huang, Y. J. Lee, J. Y. Li, W. F. Wu, J. M. Shieh, Tien-Sheng Chao, W. K. Yeh, Y. H. Wang

研究成果: Conference contribution同行評審

5 引文 斯高帕斯(Scopus)

摘要

For the first time, CMOS inverters with different numbers of vertically stacked junctionless (JL) nanosheets (NSs) are demonstrated. All fabrication steps were below 600 °C, and 8-nm thick poly-Si NSs with smooth surface roughness were formed by a dry etching process. Compared to single channel devices, stacked n/p-channel FETs exhibit higher on-current with low leakage current. Furthermore, a common-gate process was performed for the fabrication of CMOS inverters. By adjusting the NS layer numbers for n/pFETs, respectively, the voltage transfer characteristics (VTCs) of the CMOS inverter can be matched much better to reduce the noise margin due to on-current matching without area penalty. This work experimentally demonstrates a new configuration of CMOS inverters on stacked NSs, which is promising for System-on-Panel (SoP) and 3D-ICs applications.

原文English
主出版物標題2018 IEEE International Electron Devices Meeting, IEDM 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面21.4.1-21.4.4
ISBN(電子)9781728119878
DOIs
出版狀態Published - 16 1月 2019
事件64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
持續時間: 1 12月 20185 12月 2018

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2018-December
ISSN(列印)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
國家/地區United States
城市San Francisco
期間1/12/185/12/18

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