Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFET

Ta-Hui Wang*, C. F. Hsu, L. P. Chiang, N. K. Zous, Tien-Sheng Chao, C. Y. Chang

*此作品的通信作者

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

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Engineering & Materials Science