Voltage-polarity-independent and high-speed resistive switching properties of V-doped SrZrO 3 thin films

Chun Chieh Lin*, Chih Yang Lin, Meng Han Lin, Chen Hsi Lin, Tseung-Yuen Tseng

*此作品的通信作者

研究成果: Article同行評審

64 引文 斯高帕斯(Scopus)

摘要

In this paper, nonpolar resistive switching behavior is reported for the first time in a SZO-based memory device. The electrode materials used which have different conductivities affect the resistive switching properties of the device. The Al/V:SZO-LNO/Pt device shows nonpolar switching behavior, whereas the Al/V:SZO/LNO device has bipolar switching property. The resistance ratios of these two devices are quite distinct owing to the difference between the resistance of low resistance states. The Al/V:SZO-LNO/Pt device with lower resistive switching voltages (±7 V turn on and ±2 V turn off) and higher resistance ratio (10 7 is more suitable for practical applications compared to the Al/V:SZO/LNO device. The switching speed of the Al/V:SZO-LNO/Pt device is 10 ns, which is the fastest speed that has ever been reported. The conduction mechanisms, nondestructive readout property, retention time, and endurance of this device are also reported in this paper.

原文American English
頁(從 - 到)3146-3151
頁數6
期刊IEEE Transactions on Electron Devices
54
發行號12
DOIs
出版狀態Published - 1 十二月 2007

指紋

深入研究「Voltage-polarity-independent and high-speed resistive switching properties of V-doped SrZrO <sub>3</sub> thin films」主題。共同形成了獨特的指紋。

引用此