TY - GEN
T1 - Voltage Control of Magnetism
T2 - 2023 IEEE International Memory Workshop, IMW 2023
AU - Khandelwal, Astha
AU - Chopdekar, Rajesh
AU - Surampalli, Akash
AU - Tiwari, Kaushal
AU - Negi, Naveen
AU - Kalitsov, Alan
AU - Wan, Lei
AU - Katine, Jordan
AU - Stewart, Derek
AU - Santos, Tiffany
AU - Huang, Yen Lin
AU - Ramesh, R.
AU - Prasad, Bhagwati
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Conventional spintronics-based memory devices use an electrical current in elegant ways to control the direction and dynamics of electrons' spin, yet at higher energy cost and lower device endurance. Therefore, keeping pace with the growing demand for faster, smaller, and ultra-low-power electronic devices, research in the field of voltage control of magnetism has intensified recently with the promises to deliver ultra-low-power operating non-volatile memory solutions for next-generation computing systems. Here, we present our recent efforts in voltage-controlled magnetism via different approaches; voltage-controlled magnetic anisotropy (VCMA), voltage-controlled exchange coupling (VCEC), and multiferroic-based magnetoelectric coupling (MEC) for spintronics applications. These studies yielded several new findings. Large tunability of perpendicular magnetic anisotropy (PMA) has been achieved with the insertion of the Pt layer at the MgO/Ferromagnet interface. The modulation of the interlayer exchange coupling with the Ru spacer layer has been demonstrated by using non-ionic liquid gating such as MgO. Besides this, we have also shown the modulation of the magnetism by utilizing the magneto-electric coupling effect in a bismuth ferrite-based multiferroic system. These efforts provide several routes to modulate the resistance states of spintronic devices at low power and bring forth a vast playground to develop next-generation energy-efficient computing devices.
AB - Conventional spintronics-based memory devices use an electrical current in elegant ways to control the direction and dynamics of electrons' spin, yet at higher energy cost and lower device endurance. Therefore, keeping pace with the growing demand for faster, smaller, and ultra-low-power electronic devices, research in the field of voltage control of magnetism has intensified recently with the promises to deliver ultra-low-power operating non-volatile memory solutions for next-generation computing systems. Here, we present our recent efforts in voltage-controlled magnetism via different approaches; voltage-controlled magnetic anisotropy (VCMA), voltage-controlled exchange coupling (VCEC), and multiferroic-based magnetoelectric coupling (MEC) for spintronics applications. These studies yielded several new findings. Large tunability of perpendicular magnetic anisotropy (PMA) has been achieved with the insertion of the Pt layer at the MgO/Ferromagnet interface. The modulation of the interlayer exchange coupling with the Ru spacer layer has been demonstrated by using non-ionic liquid gating such as MgO. Besides this, we have also shown the modulation of the magnetism by utilizing the magneto-electric coupling effect in a bismuth ferrite-based multiferroic system. These efforts provide several routes to modulate the resistance states of spintronic devices at low power and bring forth a vast playground to develop next-generation energy-efficient computing devices.
UR - http://www.scopus.com/inward/record.url?scp=85163281132&partnerID=8YFLogxK
U2 - 10.1109/IMW56887.2023.10145821
DO - 10.1109/IMW56887.2023.10145821
M3 - Conference contribution
AN - SCOPUS:85163281132
T3 - 2023 IEEE International Memory Workshop, IMW 2023 - Proceedings
BT - 2023 IEEE International Memory Workshop, IMW 2023 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 21 May 2023 through 24 May 2023
ER -