## 摘要

Capacitance dispersion over frequency is investigated for relaxed In_{0.2}Ga_{0.8}As/GaAs Schottky diodes. While the high-frequency capacitance is voltage-independent, the low-frequency capacitance is seen to decrease with reverse voltage. Based on a Schottky barrier combined with a high-resistance layer containing traps, a simplified equation for the differential capacitance is derived to explain the capacitance-voltage-frequency relation. It is found that the high-frequency capacitance corresponds to the total thickness of the Schottky depletion and the high-resistance layer, while the low-frequency capacitance at a small reverse voltage is the Schottky depletion capacitance and at a large reverse voltage is the high-frequency capacitance.

原文 | English |
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頁（從 - 到） | 1102-1103 |

頁數 | 2 |

期刊 | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |

卷 | 39 |

發行號 | 3 A |

DOIs | |

出版狀態 | Published - 2000 |

## 指紋

深入研究「Voltage and frequency dependence of differential capacitance in relaxed Ino_{0.2}Ga

_{0.8}As/GaAs Schottky diodes」主題。共同形成了獨特的指紋。