Voltage and frequency dependence of differential capacitance in relaxed Ino0.2Ga0.8As/GaAs Schottky diodes

Jenn-Fang Chen*, Nie Chuan Chen, Jiin Shung Wang, Pai Yong Wang

*此作品的通信作者

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摘要

Capacitance dispersion over frequency is investigated for relaxed In0.2Ga0.8As/GaAs Schottky diodes. While the high-frequency capacitance is voltage-independent, the low-frequency capacitance is seen to decrease with reverse voltage. Based on a Schottky barrier combined with a high-resistance layer containing traps, a simplified equation for the differential capacitance is derived to explain the capacitance-voltage-frequency relation. It is found that the high-frequency capacitance corresponds to the total thickness of the Schottky depletion and the high-resistance layer, while the low-frequency capacitance at a small reverse voltage is the Schottky depletion capacitance and at a large reverse voltage is the high-frequency capacitance.

原文English
頁(從 - 到)1102-1103
頁數2
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
39
發行號3 A
DOIs
出版狀態Published - 2000

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