Visualizing correlation between carrier mobility and defect density in MoS2FET

Fu Xiang Rikudo Chen, Naoya Kawakami, Chang Tsan Lee, Pen Yuan Shih, Zi Cheng Wu, Yong Cheng Yang, Hao Wei Tu, Wen Bin Jian, Chenming Hu, Chun Liang Lin*

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Transition metal dichalcogenides (TMDs) with only a few atoms thickness provide an excellent solution to scale down current semiconductor devices. Many studies have demonstrated that molybdenum disulfide (MoS2), a member of TMDs, is promising as a channel material to fabricate field-effect transistors (FETs). However, the carrier mobility in MoS2 FET is always far lower than the theoretical prediction. Although this poor performance can be attributed to the defects, it still lacks a quantitative analysis clarifying the correlation between carrier mobility and defect density. In this work, by using scanning tunneling microscopy, we directly counted the defects in MoS2 FETs with different carrier mobility. We found that vacancies and impurities equally contribute to carrier mobility and the total defect density induces a power-law decreasing tendency to the carrier mobility of MoS2 FET. Our current results directly prove that the reduction of point defects can exponentially improve the carrier mobility of FETs made by TMDs.

原文English
文章編號151601
期刊Applied Physics Letters
121
發行號15
DOIs
出版狀態Published - 10 10月 2022

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