Excellent device characteristics are reported for both n-channel and p-channel (complementary) IGFETs (insulated gate field-effect transistors) with very thin nitride/oxide stacked gate insulators (10-14-nm equivalent oxide thickness). The top nitride layer (as thin as 4 nm) is effective in preventing boron penetration from the p** plus -poly gate to the channel. The threshold voltage instability and channel hot-carrier effects are controlled by using the very thin top nitride layer and complementary gate work work functions, i. e. , n** plus -poly for n-channel and p** plus -poly for p-channel IGFETs, respectively. Such composite insulators are regarded as very promising for submicrometer VLSI CMOS applications.
|頁（從 - 到）||25-26|
|期刊||Digest of Technical Papers - Symposium on VLSI Technology|
|出版狀態||Published - 1987|