VERY THIN NITRIDE/OXIDE COMPOSITE GATE INSULATOR FOR VLSI CMOS.

L. Dori*, J. Sun, M. Arienzo, S. Basavaiah, Y. Taur, D. Zichermann

*此作品的通信作者

    研究成果: Conference article同行評審

    12 引文 斯高帕斯(Scopus)

    摘要

    Excellent device characteristics are reported for both n-channel and p-channel (complementary) IGFETs (insulated gate field-effect transistors) with very thin nitride/oxide stacked gate insulators (10-14-nm equivalent oxide thickness). The top nitride layer (as thin as 4 nm) is effective in preventing boron penetration from the p** plus -poly gate to the channel. The threshold voltage instability and channel hot-carrier effects are controlled by using the very thin top nitride layer and complementary gate work work functions, i. e. , n** plus -poly for n-channel and p** plus -poly for p-channel IGFETs, respectively. Such composite insulators are regarded as very promising for submicrometer VLSI CMOS applications.

    原文English
    頁(從 - 到)25-26
    頁數2
    期刊Digest of Technical Papers - Symposium on VLSI Technology
    出版狀態Published - 1987

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