Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics

M. Y. Yang, C. H. Huang, Albert Chin*, Chunxiang Zhu, B. J. Cho, M. F. Li, Dim Lee Kwong


    研究成果: Letter同行評審

    36 引文 斯高帕斯(Scopus)


    Using high-κ Al2O3 doped Ta2O5 dielectric, we have obtained record high MIM capacitance density of 17 fF / μm2 at 100 KHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9 × 10-7 A/cm2. In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2 × 10-12 A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-μm MOSFET. This very high capacitance density with good MIM capacitor characteristics can significantly reduce the chip size of RF ICs.

    頁(從 - 到)431-433
    期刊IEEE Microwave and Wireless Components Letters
    出版狀態Published - 1 十月 2003


    深入研究「Very high density RF MIM capacitors (17 fF/μm<sup>2</sup>) using high-κ Al<sub>2</sub>O<sub>3</sub> doped Ta<sub>2</sub>O<sub>5</sub> dielectrics」主題。共同形成了獨特的指紋。