Vertically-aligned indium nitride nanorod arrays as bright terahertz emitter

Hyeyoung Ahn*, C. L. Pan

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

The physical properties of vertically-aligned Nitride (InN) nanorod arrays grown on Si(111) by plasma-assisted molecular-beam epitaxy in (THz) spectral range has been elucidated by terahertz domain spectroscopy (THz-TDS) and their application as efficient THz emitter has been investigated. The key that determine the free carrier dynamics of the InN are extracted by applying a modified Drude model, includes the scattering effect of electrons along the of nanorods, while those of InN film are obtained by Drude model. Due to the large surface areas provided by the of nanorods, more than ten times of THz intensity compared to InN film is obtained for photoexcited nanorod array through the photo-Dember effect. However, power enhancement is selectively depending on the size of nanorods with respect to the thickness of surface accumulation layer.

原文English
主出版物標題2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
DOIs
出版狀態Published - 1 12月 2008
事件2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 - Singapore, Singapore
持續時間: 8 12月 200811 12月 2008

出版系列

名字2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

Conference

Conference2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
國家/地區Singapore
城市Singapore
期間8/12/0811/12/08

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