Vertical GaN MOSFET Power Devices

Catherine Langpoklakpam, An Chen Liu, Yi Kai Hsiao, Chun Hsiung Lin, Hao Chung Kuo*

*此作品的通信作者

研究成果: Review article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices. These attributes position GaN as a pivotal material for the development of power devices. Among the various GaN-based devices, vertical GaN MOSFETs stand out for their numerous advantages over their silicon MOSFET counterparts. These advantages encompass high-power device applications. This review provides a concise overview of their significance and explores their distinctive architectures. Additionally, it delves into the advantages of vertical GaN MOSFETs and highlights their recent advancements. In conclusion, the review addresses methods to enhance the breakdown voltage of vertical GaN devices. This comprehensive perspective underscores the pivotal role of vertical GaN MOSFETs in the realm of power electronics and their continual progress.

原文English
文章編號1937
期刊Micromachines
14
發行號10
DOIs
出版狀態Published - 10月 2023

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