Vertical-conducting p-side-up GaN/mirror/Si light-emitting diodes by laser lift-off and wafer-transfer techniques

Dong Sing Wuu*, Shun Cheng Hsu, Shao Hua Huang, Ray-Hua Horng

*此作品的通信作者

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

A p-side-up GaN/Ag/Au-Sn/Si light-emitting diode (LED) has been fabricated by a combination of laser lift-off and wafer-transfer techniques. The Ag/Au-Sn mirror structure was chosen to favor high optical reflectivity, low contact resistance with n-GaN, vertical conducting, and low-temperature (∼300°C) wafer bonding. The GaN/Ag/Au-Sn/Si LED presented a maximum luminance intensity of 129 mod (@ 20 mA) with a forward voltage of 3.3 V. The luminance intensity is over two times in magnitude as compared with that of the original planar GaN/sapphire LED. Under high current injection, the GaN/Ag/Au-Sn/Si LED also showed a more stable emission wavelength. This feature is attributed to the Si substrate providing a good heat sink.

原文English
頁(從 - 到)2699-2703
頁數5
期刊Physica Status Solidi (A) Applied Research
201
發行號12
DOIs
出版狀態Published - 1 九月 2004

指紋

深入研究「Vertical-conducting p-side-up GaN/mirror/Si light-emitting diodes by laser lift-off and wafer-transfer techniques」主題。共同形成了獨特的指紋。

引用此