Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

Sergey A. Blokhin; Nikolai A. Maleev; Alexander G. Kuzmenkov; Alexey V. Sakharov; Marina M. Kulagina; Yuri M. Shernyakov; Innokenty I. Novikov; Mikhail V. Maximov; Victor M. Ustinov; Alexey R. Kovsh; Sergey S. Mikhrin; Nikolai N. Ledentsov; Kuo-Jui Lin; Jim Y. Chi

doi:10.1109/JQE.2006.880125

Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

Sergey A. Blokhin^*
, Nikolai A. Maleev
, Alexander G. Kuzmenkov
, Alexey V. Sakharov
, Marina M. Kulagina
, Yuri M. Shernyakov
, Innokenty I. Novikov
, Mikhail V. Maximov
, Victor M. Ustinov
, Alexey R. Kovsh
, Sergey S. Mikhrin
, Nikolai N. Ledentsov
, Kuo-Jui Lin
, Jim Y. Chi

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

42 引文斯高帕斯（Scopus）

摘要

Molecular beam epitaxy-grown 0.98-μm vertical-cavity surface-emitting lasers (VCSELs) with a three-stack submonolayer (SML) InGaAs quantum-dot (QD) active region and fully doped Al_xGa_1-x As-GaAs DBRs was studied. Large-aperture VCSELs demonstrated internal optical losses less than 0.1% per one pass. Single-mode operation throughout the whole current range was observed for SML QD VCSELs with the tapered oxide apertures diameter less than 2 μm. Devices with 3-μm tapered-aperture showed high single-mode output power of 4 mW and external quantum efficiency of 68% at room temperature.

原文	English
頁（從 - 到）	851-858
頁數	8
期刊	IEEE Journal of Quantum Electronics
卷	42
發行號	9
DOIs	https://doi.org/10.1109/JQE.2006.880125
出版狀態	Published - 9月 2006

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10.1109/JQE.2006.880125

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Blokhin, S. A., Maleev, N. A., Kuzmenkov, A. G., Sakharov, A. V., Kulagina, M. M., Shernyakov, Y. M., Novikov, I. I., Maximov, M. V., Ustinov, V. M., Kovsh, A. R., Mikhrin, S. S., Ledentsov, N. N., Lin, K.-J., & Chi, J. Y. (2006). Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots. IEEE Journal of Quantum Electronics, 42(9), 851-858. https://doi.org/10.1109/JQE.2006.880125

@article{00201b46abd4427fa5f3dec04a164be8,

title = "Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots",

abstract = "Molecular beam epitaxy-grown 0.98-μm vertical-cavity surface-emitting lasers (VCSELs) with a three-stack submonolayer (SML) InGaAs quantum-dot (QD) active region and fully doped AlxGa1-x As-GaAs DBRs was studied. Large-aperture VCSELs demonstrated internal optical losses less than 0.1\% per one pass. Single-mode operation throughout the whole current range was observed for SML QD VCSELs with the tapered oxide apertures diameter less than 2 μm. Devices with 3-μm tapered-aperture showed high single-mode output power of 4 mW and external quantum efficiency of 68\% at room temperature.",

keywords = "Distributed Bragg reflector (DBR), Internal optical losses, Quantum dot (QD), Single-mode, Thermal resistance, Vertical-cavity surface-emitting laser (VCSEL)",

author = "Blokhin, \{Sergey A.\} and Maleev, \{Nikolai A.\} and Kuzmenkov, \{Alexander G.\} and Sakharov, \{Alexey V.\} and Kulagina, \{Marina M.\} and Shernyakov, \{Yuri M.\} and Novikov, \{Innokenty I.\} and Maximov, \{Mikhail V.\} and Ustinov, \{Victor M.\} and Kovsh, \{Alexey R.\} and Mikhrin, \{Sergey S.\} and Ledentsov, \{Nikolai N.\} and Kuo-Jui Lin and Chi, \{Jim Y.\}",

year = "2006",

month = sep,

doi = "10.1109/JQE.2006.880125",

language = "English",

volume = "42",

pages = "851--858",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

Blokhin, SA, Maleev, NA, Kuzmenkov, AG, Sakharov, AV, Kulagina, MM, Shernyakov, YM, Novikov, II, Maximov, MV, Ustinov, VM, Kovsh, AR, Mikhrin, SS, Ledentsov, NN, Lin, K-J & Chi, JY 2006, 'Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots', IEEE Journal of Quantum Electronics, 卷 42, 編號 9, 頁 851-858. https://doi.org/10.1109/JQE.2006.880125

TY - JOUR

T1 - Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

AU - Blokhin, Sergey A.

AU - Maleev, Nikolai A.

AU - Kuzmenkov, Alexander G.

AU - Sakharov, Alexey V.

AU - Kulagina, Marina M.

AU - Shernyakov, Yuri M.

AU - Novikov, Innokenty I.

AU - Maximov, Mikhail V.

AU - Ustinov, Victor M.

AU - Kovsh, Alexey R.

AU - Mikhrin, Sergey S.

AU - Ledentsov, Nikolai N.

AU - Lin, Kuo-Jui

AU - Chi, Jim Y.

PY - 2006/9

Y1 - 2006/9

N2 - Molecular beam epitaxy-grown 0.98-μm vertical-cavity surface-emitting lasers (VCSELs) with a three-stack submonolayer (SML) InGaAs quantum-dot (QD) active region and fully doped AlxGa1-x As-GaAs DBRs was studied. Large-aperture VCSELs demonstrated internal optical losses less than 0.1% per one pass. Single-mode operation throughout the whole current range was observed for SML QD VCSELs with the tapered oxide apertures diameter less than 2 μm. Devices with 3-μm tapered-aperture showed high single-mode output power of 4 mW and external quantum efficiency of 68% at room temperature.

AB - Molecular beam epitaxy-grown 0.98-μm vertical-cavity surface-emitting lasers (VCSELs) with a three-stack submonolayer (SML) InGaAs quantum-dot (QD) active region and fully doped AlxGa1-x As-GaAs DBRs was studied. Large-aperture VCSELs demonstrated internal optical losses less than 0.1% per one pass. Single-mode operation throughout the whole current range was observed for SML QD VCSELs with the tapered oxide apertures diameter less than 2 μm. Devices with 3-μm tapered-aperture showed high single-mode output power of 4 mW and external quantum efficiency of 68% at room temperature.

KW - Distributed Bragg reflector (DBR)

KW - Internal optical losses

KW - Quantum dot (QD)

KW - Single-mode

KW - Thermal resistance

KW - Vertical-cavity surface-emitting laser (VCSEL)

UR - https://www.scopus.com/pages/publications/33746494057

U2 - 10.1109/JQE.2006.880125

DO - 10.1109/JQE.2006.880125

M3 - Article

AN - SCOPUS:33746494057

SN - 0018-9197

VL - 42

SP - 851

EP - 858

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 9

ER -

Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

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