Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

Sergey A. Blokhin*, Nikolai A. Maleev, Alexander G. Kuzmenkov, Alexey V. Sakharov, Marina M. Kulagina, Yuri M. Shernyakov, Innokenty I. Novikov, Mikhail V. Maximov, Victor M. Ustinov, Alexey R. Kovsh, Sergey S. Mikhrin, Nikolai N. Ledentsov, Kuo-Jui Lin, Jim Y. Chi

*此作品的通信作者

研究成果: Article同行評審

40 引文 斯高帕斯(Scopus)

摘要

Molecular beam epitaxy-grown 0.98-μm vertical-cavity surface-emitting lasers (VCSELs) with a three-stack submonolayer (SML) InGaAs quantum-dot (QD) active region and fully doped AlxGa1-x As-GaAs DBRs was studied. Large-aperture VCSELs demonstrated internal optical losses less than 0.1% per one pass. Single-mode operation throughout the whole current range was observed for SML QD VCSELs with the tapered oxide apertures diameter less than 2 μm. Devices with 3-μm tapered-aperture showed high single-mode output power of 4 mW and external quantum efficiency of 68% at room temperature.

原文English
頁(從 - 到)851-858
頁數8
期刊IEEE Journal of Quantum Electronics
42
發行號9
DOIs
出版狀態Published - 9月 2006

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