Vertical cavity single quantum well laser

J. L. Jewell; Kai-Feng Huang; K. Tai; Y. H. Lee; R. J. Fischer; S. L. McCall; A. Y. Cho

doi:10.1063/1.101885

Vertical cavity single quantum well laser

J. L. Jewell^*, Kai-Feng Huang, K. Tai, Y. H. Lee, R. J. Fischer, S. L. McCall, A. Y. Cho

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

65 引文斯高帕斯（Scopus）

摘要

We have achieved room-temperature pulsed and cw lasing at 980 nm in an optically pumped vertical cavity structure grown by molecular beam epitaxy containing only a single quantum well (SQW) of In_0.2Ga _0.8As. Limited gain due to the extremely short active material length of 80 Å implies that losses due to absorption, scattering, and mirror transmission are extremely low. Using 10 ps pump pulses at 860 or 880 nm, the estimated energy density absorbed in the spacer was ∼12 fJ/μm² at threshold, indicating a carrier density approximately four times that required for transparency. Continuous wave pumping yielded an estimated threshold absorbed intensity of ∼7 μW/μm².

原文	English
頁（從 - 到）	424-426
頁數	3
期刊	Applied Physics Letters
卷	55
發行號	5
DOIs	https://doi.org/10.1063/1.101885
出版狀態	Published - 1 12月 1989

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title = "Vertical cavity single quantum well laser",

abstract = "We have achieved room-temperature pulsed and cw lasing at 980 nm in an optically pumped vertical cavity structure grown by molecular beam epitaxy containing only a single quantum well (SQW) of In0.2Ga 0.8As. Limited gain due to the extremely short active material length of 80 {\AA} implies that losses due to absorption, scattering, and mirror transmission are extremely low. Using 10 ps pump pulses at 860 or 880 nm, the estimated energy density absorbed in the spacer was ∼12 fJ/μm2 at threshold, indicating a carrier density approximately four times that required for transparency. Continuous wave pumping yielded an estimated threshold absorbed intensity of ∼7 μW/μm2.",

author = "Jewell, {J. L.} and Kai-Feng Huang and K. Tai and Lee, {Y. H.} and Fischer, {R. J.} and McCall, {S. L.} and Cho, {A. Y.}",

year = "1989",

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T1 - Vertical cavity single quantum well laser

AU - Jewell, J. L.

AU - Huang, Kai-Feng

AU - Tai, K.

AU - Lee, Y. H.

AU - Fischer, R. J.

AU - McCall, S. L.

AU - Cho, A. Y.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - We have achieved room-temperature pulsed and cw lasing at 980 nm in an optically pumped vertical cavity structure grown by molecular beam epitaxy containing only a single quantum well (SQW) of In0.2Ga 0.8As. Limited gain due to the extremely short active material length of 80 Å implies that losses due to absorption, scattering, and mirror transmission are extremely low. Using 10 ps pump pulses at 860 or 880 nm, the estimated energy density absorbed in the spacer was ∼12 fJ/μm2 at threshold, indicating a carrier density approximately four times that required for transparency. Continuous wave pumping yielded an estimated threshold absorbed intensity of ∼7 μW/μm2.

AB - We have achieved room-temperature pulsed and cw lasing at 980 nm in an optically pumped vertical cavity structure grown by molecular beam epitaxy containing only a single quantum well (SQW) of In0.2Ga 0.8As. Limited gain due to the extremely short active material length of 80 Å implies that losses due to absorption, scattering, and mirror transmission are extremely low. Using 10 ps pump pulses at 860 or 880 nm, the estimated energy density absorbed in the spacer was ∼12 fJ/μm2 at threshold, indicating a carrier density approximately four times that required for transparency. Continuous wave pumping yielded an estimated threshold absorbed intensity of ∼7 μW/μm2.

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U2 - 10.1063/1.101885

DO - 10.1063/1.101885

M3 - Article

AN - SCOPUS:0000086798

VL - 55

SP - 424

EP - 426

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -

Vertical cavity single quantum well laser

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