Vertical cavity single quantum well laser

J. L. Jewell*, Kai-Feng Huang, K. Tai, Y. H. Lee, R. J. Fischer, S. L. McCall, A. Y. Cho

*此作品的通信作者

研究成果: Article同行評審

65 引文 斯高帕斯(Scopus)

摘要

We have achieved room-temperature pulsed and cw lasing at 980 nm in an optically pumped vertical cavity structure grown by molecular beam epitaxy containing only a single quantum well (SQW) of In0.2Ga 0.8As. Limited gain due to the extremely short active material length of 80 Å implies that losses due to absorption, scattering, and mirror transmission are extremely low. Using 10 ps pump pulses at 860 or 880 nm, the estimated energy density absorbed in the spacer was ∼12 fJ/μm2 at threshold, indicating a carrier density approximately four times that required for transparency. Continuous wave pumping yielded an estimated threshold absorbed intensity of ∼7 μW/μm2.

原文English
頁(從 - 到)424-426
頁數3
期刊Applied Physics Letters
55
發行號5
DOIs
出版狀態Published - 1 12月 1989

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