TY - JOUR
T1 - Vertical cavity modulator for optical interconnection and its high speed performance
AU - Liu, Hong
AU - Lin, Chien-Chung
AU - Harris, James S.
PY - 2000/4/27
Y1 - 2000/4/27
N2 - Free-space smart-pixel optical interconnect architecture promises to relieve the interconnect bottleneck in high-speed parallel interconnection and switching systems. Vertical cavity Fabry-Perot multiple quantum well (MQW) modulators, which offers high on-off contrast, low insertion loss, low operating voltage swing, low chirp and easy to be integrated with silicon electronics is one of the most promising devices. A low chirp vertical cavity Fabry-Perot modulator where the top and bottom mirrors are made of distributed Bragg reflector (DBR), the undoped regions between top mirrors and intracavity contact region (n-doped) contain 26 GaAs/Al0.35Ga0.5As quantum wells. By applying a voltage across the quantum well regions through intracavity contacts (the n-doped region), the absorptive characteristics of the active region at the cavity's resonance wavelength can be modified through the quantum-confined Stark effect (QCSE). The device under test is integrated with a microwave probe for efficient wafer level GHz probing without further high frequency packaging. To minimize the parasitic capacitance of the probe pads, the conducting region underneath probe pads is etched away and planarized with low dielectric material-electronics resins BCB. In this paper, we report the low switching voltage with only 3.5 V, high contrast ratio of 10:1 and high bandwidth of 16 GHz. The effects of incident laser power on the contrast ratio and modulation bandwidth were also discussed.
AB - Free-space smart-pixel optical interconnect architecture promises to relieve the interconnect bottleneck in high-speed parallel interconnection and switching systems. Vertical cavity Fabry-Perot multiple quantum well (MQW) modulators, which offers high on-off contrast, low insertion loss, low operating voltage swing, low chirp and easy to be integrated with silicon electronics is one of the most promising devices. A low chirp vertical cavity Fabry-Perot modulator where the top and bottom mirrors are made of distributed Bragg reflector (DBR), the undoped regions between top mirrors and intracavity contact region (n-doped) contain 26 GaAs/Al0.35Ga0.5As quantum wells. By applying a voltage across the quantum well regions through intracavity contacts (the n-doped region), the absorptive characteristics of the active region at the cavity's resonance wavelength can be modified through the quantum-confined Stark effect (QCSE). The device under test is integrated with a microwave probe for efficient wafer level GHz probing without further high frequency packaging. To minimize the parasitic capacitance of the probe pads, the conducting region underneath probe pads is etched away and planarized with low dielectric material-electronics resins BCB. In this paper, we report the low switching voltage with only 3.5 V, high contrast ratio of 10:1 and high bandwidth of 16 GHz. The effects of incident laser power on the contrast ratio and modulation bandwidth were also discussed.
UR - http://www.scopus.com/inward/record.url?scp=0033749317&partnerID=8YFLogxK
U2 - 10.1117/12.384401
DO - 10.1117/12.384401
M3 - Conference article
AN - SCOPUS:0033749317
SN - 0277-786X
VL - 3952
SP - 234
EP - 241
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
T2 - Optoelectronic Interconnects VII; Photonics Packaging and Integration II
Y2 - 24 January 2000 through 26 January 2000
ER -