@inproceedings{82b1bc2d98554308843dbdba241e1758,
title = "Variability of threshold voltage induced by work-function fluctuation and random dopant fluctuation on gate-All-Around nanowire nmosfets",
abstract = "We advance the localized work-function fluctuation (LWKF) method to examine the variability of threshold voltage (\mathrm{V}-{\mathrm{t}\mathrm{h}}) induced by titanium nitride (TiN) metal-gate work-function fluctuation (WKF) and combined the WKF with the random dopant fluctuation (RDF) for various grain sizes on Si gate-All-Around (GAA) nanowire (NW) MOSFETs. Our results show that the WKF-induced variability of \mathrm{V}-{\mathrm{t}\mathrm{h}} will be dominated by bamboo-Type TiN grains and its impact is larger than that induced by the RDF with doped channel (RDF (doped)). Additionally, the variability of \mathrm{V}-{\mathrm{t}\mathrm{h}} induced by the WKF and the RDF (doped) could be treated as independent fluctuation sources because the channel dopants are away from the metal-gate/high-\kappa interface. Consequently, statistical models are further proposed for the \sigma\mathrm{V}-{\mathrm{t}\mathrm{h}} induced by the WKF and the combined WKF with RDF (doped) by considering position effect of nanosized TiN grains.",
keywords = "GAA, Grain size, Nanowire, Random dopant fluctuation, Statistical model, TiN, Work function fluctuation",
author = "Sung, {Wen Li} and Chuang, {Min Hui} and Yiming Li",
year = "2019",
month = sep,
doi = "10.1109/SISPAD.2019.8870426",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Francesco Driussi",
booktitle = "Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019",
address = "United States",
note = "24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 ; Conference date: 04-09-2019 Through 06-09-2019",
}