摘要
A microwave tunable high-Q active bandpass filter was developed using a varactor diode for tuning and a MESFET to provide negative resistance for increasing the tank circuit Q-value. Tuning ranges of 500 MHz for the one-pole filter and 430 MHz for the two-pole filter were achieved with a center frequency of 10 GHz. A 3-dB bandwidth of 20 MHz for the one-pole filter and 80 MHz for the two-pole filter was obtained. The passband insertion loss is typically 0 ± 1 dB.
原文 | English |
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頁(從 - 到) | 499-502 |
頁數 | 4 |
期刊 | IEEE MTT-S International Microwave Symposium Digest |
卷 | 1 |
DOIs | |
出版狀態 | Published - 1 1月 1990 |
事件 | 1990 IEEE MTT-S International Microwave Symposium Digest Part 1 (of 3) - Dallas, TX, USA 持續時間: 8 5月 1990 → 10 5月 1990 |