A microwave tunable high-Q active bandpass filter was developed using a varactor diode for tuning and a MESFET to provide negative resistance for increasing the tank circuit Q-value. Tuning ranges of 500 MHz for the one-pole filter and 430 MHz for the two-pole filter were achieved with a center frequency of 10 GHz. A 3-dB bandwidth of 20 MHz for the one-pole filter and 80 MHz for the two-pole filter was obtained. The passband insertion loss is typically 0 ± 1 dB.
|頁（從 - 到）||499-502|
|期刊||IEEE MTT-S International Microwave Symposium Digest|
|出版狀態||Published - 1 1月 1990|
|事件||1990 IEEE MTT-S International Microwave Symposium Digest Part 1 (of 3) - Dallas, TX, USA|
持續時間: 8 5月 1990 → 10 5月 1990