TY - GEN
T1 - Validation of Dynamically Depleted Symmetric BSIM-SOI Compact model for RF SOI T/R Switch Applications
AU - Nandi, Debashish
AU - Dabhi, Chetan Kumar
AU - Rajasekaran, Dinesh
AU - Karumuri, Naveen
AU - Turuvekere, Sreenidhi
AU - Swaminathan, Balaji
AU - Srihari, Srikanth
AU - Dutta, Anupam
AU - Hu, Chenming
AU - Chauhan, Yogesh Singh
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - In this paper, we present the symmetric BSIM-SOI compact model, tailored for Dynamically Depleted Silicon-on-Insulator (DDSOI) MOSFETs, with a primary focus on optimizing their performance in RF Transmit/Receive (T/R) switch applications. This surface potential-based model offers a comprehensive characterization of device behavior, encompassing both Partial Depletion (PD) and Full Depletion (FD) operation regimes while preserving source-drain symmetry and providing correct representation of higher order harmonics. Experimental validation is performed using advanced SPST RF T/R switch hardware from GlobalFoundries Inc., including detailed performance evaluations of critical parameters, such as On resistance, off capacitance, insertion loss, and isolation.
AB - In this paper, we present the symmetric BSIM-SOI compact model, tailored for Dynamically Depleted Silicon-on-Insulator (DDSOI) MOSFETs, with a primary focus on optimizing their performance in RF Transmit/Receive (T/R) switch applications. This surface potential-based model offers a comprehensive characterization of device behavior, encompassing both Partial Depletion (PD) and Full Depletion (FD) operation regimes while preserving source-drain symmetry and providing correct representation of higher order harmonics. Experimental validation is performed using advanced SPST RF T/R switch hardware from GlobalFoundries Inc., including detailed performance evaluations of critical parameters, such as On resistance, off capacitance, insertion loss, and isolation.
KW - Analog
KW - BSIM
KW - Compact Model
KW - DDSOI
KW - RF Switch
KW - Symmetric BSIM-SOI
UR - http://www.scopus.com/inward/record.url?scp=85193218196&partnerID=8YFLogxK
U2 - 10.1109/EDTM58488.2024.10512295
DO - 10.1109/EDTM58488.2024.10512295
M3 - Conference contribution
AN - SCOPUS:85193218196
T3 - IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024
BT - IEEE Electron Devices Technology and Manufacturing Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024
Y2 - 3 March 2024 through 6 March 2024
ER -