Valence number transition and silicate formation of cerium oxide films on Si(100)

M. Mamatrishat, M. Kouda, K. Kakushima*, H. Nohira, P. Ahmet, Y. Kataoka, A. Nishiyama, K. Tsutsui, N. Sugii, K. Natori, T. Hattori, H. Iwai

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Interface reactions of a Ce-oxide layer with Si(100) wafers have been characterized by X-ray photoelectron spectroscopy. The ratio of Ce atoms in Ce 3+ states within the Ce-oxide layer has been found to decrease from 47% at as-deposited sample to 26% after annealing. From detailed reaction analysis of valence number transitions of Ce atoms and the creation of SiO 2 layer at the interface, the reacted Ce 3+ atoms are converted into silicates and Ce 4+ with a ratio of 2:1. The energy bandgap of Ce-silicate layer has been determined as 7.67 eV and the valence band offset with respect to Si(100) wafer has been extracted as 4.35 eV.

原文English
頁(從 - 到)1513-1516
頁數4
期刊Vacuum
86
發行號10
DOIs
出版狀態Published - 27 四月 2012

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