Valence-band tunneling induced low frequency noise in ultrathin oxide (15 Å) n -type metal-oxide-semiconductor field effect transistors

J. W. Wu*, J. W. You, H. C. Ma, C. C. Cheng, C. S. Chang, G. W. Huang, Ta-Hui Wang

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Low frequency flicker noise in n -type metal-oxide-semiconductor field effect transistors (n -MOSFETs) with 15 Å gate oxide is investigated. A noise generation mechanism resulting from valence band tunneling is proposed. In strong inversion condition, valence-band electron tunneling takes place and results in the splitting of electron and hole quasi-Fermi levels in the channel. The excess low frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi levels. Random telegraph signal in a small area device is characterized to support our model.

原文English
頁(從 - 到)5076-5077
頁數2
期刊Applied Physics Letters
85
發行號21
DOIs
出版狀態Published - 1 十一月 2004

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