V-band flip-chip assembled gain block using In0:6Ga0:4As metamorphic high-electron-mobility transistor technology

Keyphrases

• Complementary Metal Oxide Semiconductor 33%
• DC Characteristics 33%
• DC Power Consumption 66%
• Flip chip 100%
• Flip-chip Package 33%
• Gain Block 100%
• Low Power Consumption 33%
• Maximum Gain 33%
• Metamorphic High Electron Mobility Transistor (mHEMT) 100%
• Packaged Device 33%
• Semiconductor Technology 33%
• Small-signal Gain 33%
• Submicron 33%
• Superior Performance 33%
• Transconductance 33%
• Transistor Device 33%
• Transistor Technology 100%
• V-band 100%

Engineering

• Electric Power Utilization 66%
• Gain Block 100%
• Low Power Consumption 33%
• Metal Oxide Semiconductor 33%
• Signal Gain 33%
• V-Band 100%

Earth and Planetary Sciences

• Extremely High Frequency 100%
• High Electron Mobility Transistors 100%
• Metal Oxide Semiconductor 50%
• Transconductance 50%