Using ultrathin double-layer gas-permeable capping metal to form sensitive low-power gas sensors

Govindasamy Madhaiyan, Chao Hsuan Chen, Hong-Cheu Lin, Hsin-Fei Meng, Hsiao-Wen Zan

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this work, we investigated a simple, sensitive, and low-powered ammonia (NH3) gas sensor using a thin bi-layered metal capped on an organic semiconductor chemoresistor to deliver a sensitive response to NH3 (ppb level) at room temperature. An optimized thin bi-layered Al/Ag metal (2 nm/10 nm) successfully forms a gas-permeable structure to realize ppb-regime gas sensing better than other single-layered thin Ag, Al, or Au (12 nm) metal electrodes. The performance of the simple metal-capped gas sensor is greatly dependent on the surface roughness of the thin metal electrodes, and the very rough thin bi-layered metal Al/Ag (2 nm/10 nm) allows high gas penetration. The optimized device exhibits more than 10% response to 100 ppb NH3 at only 0.5 V. The simple, low-cost, highly sensitive, and low-powered gas sensors are promising for Internet of things applications.

原文English
文章編號124001
頁(從 - 到)1-7
頁數7
期刊Semiconductor Science and Technology
35
發行號12
DOIs
出版狀態Published - 12月 2020

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