Using tunneling junction to enhance hole-injection in organic light-emitting diodes

Chan Ching Chang*, Shiao Wen Hwang, Ming Ta Hsieh, Jia Wei Ma, Chin H. Chen, Jenn-Fang Chen

*此作品的通信作者

研究成果: Paper同行評審

摘要

We demonstrate enhanced hole-injection and lower driving voltage in vacuum-deposited organic light-emitting diodes (OLEDs) with a novel tunneling junction composed of the Mg:Alq3/WO3 layer. The device, ITO/Mg:Alq3/WO3/NPB/Alq3/LiF/AI, achieved one of the lowest driving voltages of 5.8 V at 20mA/cm2 for conventional small molecule OLEDs. We propose the laminated Mg:Alq3/WO 3/NPB functions as a Fowler Nordheim tunneling junction, which can improve hole-injection. It was found to also prolong device lifetime under dc driving, that is comparable to the best reported for the Alq3 emitter.

原文English
頁面687-690
頁數4
出版狀態Published - 12月 2005
事件IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan
持續時間: 6 12月 20059 12月 2005

Conference

ConferenceIDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005
國家/地區Japan
城市Takamatsu
期間6/12/059/12/05

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