Using planarized p-GaN layer to reduce electrostatic discharged damage in nitride-based light-emitting diode

Chi Ling Lee*, Wei-I Lee

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Electrostatic discharge damage is a serious problem on nitride-based light-emitting diodes (LEDs), due to their large lattice mismatch between III-nitride material and the sapphire substrate, which induces high-density threading dislocations. In this study, GaN/GaInN-based LEDs with various thicknesses of the low-temperature planarized p-GaN layer were fabricated. We found that when the V-shaped defects were filled by the planarized p-GaN layer, the survival rate of LEDs under human-body mode -4000 V stress increases from 23 to 93% and the survival rate under machine mode -600 V stress increases from 20 to 67%. Thus the ability to endure higher electrostatic discharge stress will be greatly improved.

原文English
期刊Japanese Journal of Applied Physics, Part 2: Letters
46
發行號17-19
DOIs
出版狀態Published - 11 5月 2007

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