Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

Shun Wei Tang, Benoit Bakeroot, Zhen Hong Huang, Szu Chia Chen, Wei Syuan Lin, Ting Chun Lo, Matteo Borga, Dirk Wellekens, Niels Posthuma, Stefaan Decoutere, Tian Li Wu*

*此作品的通信作者

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

In this work, the gate current characteristics are investigated to explain the threshold voltage shift in AlGaN/GaN high electron mobility transistors (HEMTs) with a p-GaN gate. First, the intrinsic gate current conduction mechanisms are identified: in the low bias range (2.5 V < VG < 4V), thermionic emission (TE) dominates in the AlGaN/GaN region, whereas in a higher bias range (4 V < VG< 7 V) trap-assisted tunneling (TAT) is occurring in the Schottky/p-GaN region. Secondly, the threshold voltage shift of the stress phase is evaluated by applying a positive gate bias for various stress times. A consistent trap level with an activation energy of EA ∼ 0.6 eV is found. In conclusion, a physical model explaining the negative VTH shift by considering TAT via hole transport is proposed.

原文English
頁(從 - 到)449-453
頁數5
期刊IEEE Transactions on Electron Devices
70
發行號2
DOIs
出版狀態Published - 1 2月 2023

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