Using electroless plating technology for copper metallization in AMLCD application

Po-Tsun Liu; Yi Teh Chou; Chih Yu Su; Hung Ming Chen; An Di Huang; Bing Mau Chen; Chur Shyang Fuh; Yang Shun Fan

doi:10.1889/1.3499986

Using electroless plating technology for copper metallization in AMLCD application

Po-Tsun Liu^*, Yi Teh Chou, Chih Yu Su, Hung Ming Chen, An Di Huang, Bing Mau Chen, Chur Shyang Fuh, Yang Shun Fan

^*此作品的通信作者

光電工程學系

研究成果: Conference contribution › 同行評審

摘要

The feasibility of using electro-less plating (ELP) technology to manufacture copper (Cu) gate electrodes in TFTs is investigated. The poor adhesion between Cu and glass substrates is overcome by introducing ELP nickel-phosphorus layers. Self-aligning characteristics also omits the Cu-etching process. The similar electrical performance verifies the compatibility of this technology.

原文	English
主出版物標題	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
頁面	1479-1481
頁數	3
卷	41
版本	1
DOIs	https://doi.org/10.1889/1.3499986
出版狀態	Published - 1 12月 2010
事件	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States 持續時間: 23 5月 2010 → 28 5月 2010

Conference

Conference	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
國家/地區	United States
城市	Seattle, WA
期間	23/05/10 → 28/05/10

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10.1889/1.3499986

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title = "Using electroless plating technology for copper metallization in AMLCD application",

abstract = "The feasibility of using electro-less plating (ELP) technology to manufacture copper (Cu) gate electrodes in TFTs is investigated. The poor adhesion between Cu and glass substrates is overcome by introducing ELP nickel-phosphorus layers. Self-aligning characteristics also omits the Cu-etching process. The similar electrical performance verifies the compatibility of this technology.",

author = "Po-Tsun Liu and Chou, {Yi Teh} and Su, {Chih Yu} and Chen, {Hung Ming} and Huang, {An Di} and Chen, {Bing Mau} and Fuh, {Chur Shyang} and Fan, {Yang Shun}",

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month = dec,

day = "1",

doi = "10.1889/1.3499986",

language = "English",

volume = "41",

pages = "1479--1481",

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Liu, P-T, Chou, YT, Su, CY, Chen, HM, Huang, AD, Chen, BM, Fuh, CS & Fan, YS 2010, Using electroless plating technology for copper metallization in AMLCD application. 於 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. 1 edn, 卷 41, 頁 1479-1481, 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010, Seattle, WA, United States, 23/05/10. https://doi.org/10.1889/1.3499986

TY - GEN

T1 - Using electroless plating technology for copper metallization in AMLCD application

AU - Liu, Po-Tsun

AU - Chou, Yi Teh

AU - Su, Chih Yu

AU - Chen, Hung Ming

AU - Huang, An Di

AU - Chen, Bing Mau

AU - Fuh, Chur Shyang

AU - Fan, Yang Shun

PY - 2010/12/1

Y1 - 2010/12/1

N2 - The feasibility of using electro-less plating (ELP) technology to manufacture copper (Cu) gate electrodes in TFTs is investigated. The poor adhesion between Cu and glass substrates is overcome by introducing ELP nickel-phosphorus layers. Self-aligning characteristics also omits the Cu-etching process. The similar electrical performance verifies the compatibility of this technology.

AB - The feasibility of using electro-less plating (ELP) technology to manufacture copper (Cu) gate electrodes in TFTs is investigated. The poor adhesion between Cu and glass substrates is overcome by introducing ELP nickel-phosphorus layers. Self-aligning characteristics also omits the Cu-etching process. The similar electrical performance verifies the compatibility of this technology.

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U2 - 10.1889/1.3499986

DO - 10.1889/1.3499986

M3 - Conference contribution

AN - SCOPUS:84863300527

VL - 41

SP - 1479

EP - 1481

BT - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010

Y2 - 23 May 2010 through 28 May 2010

ER -

Using electroless plating technology for copper metallization in AMLCD application

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