Using double layer Co Si2 nanocrystals to improve the memory effects of nonvolatile memory devices

F. M. Yang*, T. C. Chang, Po-Tsun Liu, P. H. Yeh, U. S. Chen, Y. C. Yu, J. Y. Lin, S. M. Sze, J. C. Lou

*此作品的通信作者

研究成果: Article同行評審

42 引文 斯高帕斯(Scopus)

摘要

The nonvolatile memory device with multilayer nanocrystals has advantages such as the memory effects can be increased by the increasing density of the nanocrystals and the whole retention characteristic can be improved. There are much more electrons that can be stored in the double layer than single layer nanocrystal memory device. The double layer Co Si2 nanocrystals have better retention characteristic than the single layer. The good retention characteristic of the double layer device is due to the Coulomb-blockage effects on the top layer nanocrystals from the bottom layer nanocrystals. So, the memory effects of the nonvolatile memory device can be improved by using the double layer nanocrystals.

原文English
文章編號212108
頁數3
期刊Applied Physics Letters
90
發行號21
DOIs
出版狀態Published - 1 6月 2007

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