@inproceedings{8ffc30d8e6fd46cdad0df146558bccf5,
title = "Using chemical oxide layer to getter nickel inside nickel-metal-induced lateral crystallization polycrystalline silicon",
abstract = "Nickel contamination inside nickel-metal-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) is an issue to fabricate high performance thin film transistors (TFTs). A simple and effective method for gettering Ni was proposed with ~5-nm-thick chemical oxide (chem-SiO2) as the etching stop layer, and 100-nm-thick amorphous Si as the gettering layer. Ni-gettering process was annealed at 550°C in N2 ambient for only 12 h to considerably reduce Ni-metal impurity within the NILC poly-Si film.",
author = "Wang, {Bau Ming} and Yang, {Tzu Ming} and Tseng, {Ching Chieh} and Yew-Chuhg Wu",
year = "2008",
month = dec,
day = "1",
doi = "10.1149/1.2980550",
language = "English",
isbn = "9781566776554",
series = "ECS Transactions",
number = "9",
pages = "193--195",
booktitle = "ECS Transactions - Thin Film Transistors 9, TFT 9",
edition = "9",
note = "Thin Film Transistors 9, TFT 9 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 16-10-2008",
}