Using BCl 3 -based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs

Bo Wen Lin*, Chen Yi Niu, Cheng Yu Hsieh, Bau Ming Wang, Wen Ching Hsu, Ray Ming Lin, Yew-Chuhg Wu

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Wet-etching pattern sapphire substrates (PSS) have been used to grow GaN-based light-emitting diodes (LEDs). However, after wet etching, several sidewall facets are exposed on the patterns of PSS. These sidewall facets would grow zincblende GaN and form irregular voids. In this letter, BCl 3-based plasma is used to solve this problem and improve the performance of GaN-based LEDs.

原文English
文章編號6407764
頁(從 - 到)371-373
頁數3
期刊IEEE Photonics Technology Letters
25
發行號4
DOIs
出版狀態Published - 2013

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