Using BCl 3 -based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs

Bo Wen Lin; Chen Yi Niu; Cheng Yu Hsieh; Bau Ming Wang; Wen Ching Hsu; Ray Ming Lin; Yew-Chuhg Wu

doi:10.1109/LPT.2013.2238226

Using BCl ₃ -based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs

Bo Wen Lin^*, Chen Yi Niu, Cheng Yu Hsieh, Bau Ming Wang, Wen Ching Hsu, Ray Ming Lin, Yew-Chuhg Wu

^*此作品的通信作者

材料科學與工程學系

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Wet-etching pattern sapphire substrates (PSS) have been used to grow GaN-based light-emitting diodes (LEDs). However, after wet etching, several sidewall facets are exposed on the patterns of PSS. These sidewall facets would grow zincblende GaN and form irregular voids. In this letter, BCl ₃ -based plasma is used to solve this problem and improve the performance of GaN-based LEDs.

原文	English
文章編號	6407764
頁（從 - 到）	371-373
頁數	3
期刊	IEEE Photonics Technology Letters
卷	25
發行號	4
DOIs	https://doi.org/10.1109/LPT.2013.2238226
出版狀態	Published - 8 2月 2013

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10.1109/LPT.2013.2238226

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title = "Using BCl 3 -based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs",

abstract = " Wet-etching pattern sapphire substrates (PSS) have been used to grow GaN-based light-emitting diodes (LEDs). However, after wet etching, several sidewall facets are exposed on the patterns of PSS. These sidewall facets would grow zincblende GaN and form irregular voids. In this letter, BCl 3 -based plasma is used to solve this problem and improve the performance of GaN-based LEDs.",

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author = "Lin, {Bo Wen} and Niu, {Chen Yi} and Hsieh, {Cheng Yu} and Wang, {Bau Ming} and Hsu, {Wen Ching} and Lin, {Ray Ming} and Yew-Chuhg Wu",

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AU - Hsieh, Cheng Yu

AU - Wang, Bau Ming

AU - Hsu, Wen Ching

AU - Lin, Ray Ming

AU - Wu, Yew-Chuhg

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Using BCl 3 -based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs

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Using BCl ₃ -based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs