Use of WNx as diffusion barrier for copper airbridged low noise GaAs PHEMT

H. C. Chang*, Edward Yi Chang, Y. C. Lien, L. H. Chu, S. W. Chang, R. C. Huang, H. M. Lee

*此作品的通信作者

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

A low noise pseudomorphic high electron mobility transistor (PHEMT) with copper airbridges using sputtered WNx as the diffusion barrier has been developed. Both the material system and the copper airbridged PHEMT with WNx as the diffusion barrier did not decay even after thermal annealing at 250°C for 20 h. The results show that the copper airbridges with WNx diffusion barrier can be used as the interconnects for low noise GaAs PHEMTs.

原文English
頁(從 - 到)1763-1765
頁數3
期刊Electronics Letters
39
發行號24
DOIs
出版狀態Published - 27 十一月 2003

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