Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric Hf0.5 Zr0.5O: Interfacial Layer Soft Breakdown and Physical Modeling

Chen Yi Cho; Tzu Yi Chao; Tzu Yao Lin; I. Ting Wang; Sourav De; Yu Sheng Chen; Yi Ching Ong; Yu De Lin; Po Chun Yeh; Tuo Hung Hou

doi:10.1109/TED.2024.3379473

Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric Hf0.5 Zr0.5O: Interfacial Layer Soft Breakdown and Physical Modeling

Chen Yi Cho, Tzu Yi Chao, Tzu Yao Lin, I. Ting Wang, Sourav De, Yu Sheng Chen, Yi Ching Ong, Yu De Lin, Po Chun Yeh, Tuo Hung Hou^*

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

This article proposes a new mechanism, referred to as interfacial-layer soft breakdown (IL-SBD), to elucidate the intricate wake-up process in the ultrathin ferroelectric (FE) hafnium-zirconium oxide (HZO). Our study provides a comprehensive interpretation and compelling experimental evidence, highlighting the crucial role of the interfacial layer (IL) and its soft breakdown in the wake-up phenomenon. A multidomain FE wake-up model is developed, incorporating defect generation, trap-assisted tunneling (TAT) within the IL, and charge screening at the IL/HZO interface, validating the proposed mechanism. The model accurately reproduces the trend of thickness-dependent wake-up behavior and reveals additional variability induced by the wake-up process, emphasizing the utmost significance of minimizing the IL in ultrathin HZO devices.

原文	English
頁（從 - 到）	3365-3370
頁數	6
期刊	IEEE Transactions on Electron Devices
卷	71
發行號	5
DOIs	https://doi.org/10.1109/TED.2024.3379473
出版狀態	Published - 1 5月 2024

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10.1109/TED.2024.3379473

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title = "Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric Hf0.5 Zr0.5O: Interfacial Layer Soft Breakdown and Physical Modeling",

abstract = "This article proposes a new mechanism, referred to as interfacial-layer soft breakdown (IL-SBD), to elucidate the intricate wake-up process in the ultrathin ferroelectric (FE) hafnium-zirconium oxide (HZO). Our study provides a comprehensive interpretation and compelling experimental evidence, highlighting the crucial role of the interfacial layer (IL) and its soft breakdown in the wake-up phenomenon. A multidomain FE wake-up model is developed, incorporating defect generation, trap-assisted tunneling (TAT) within the IL, and charge screening at the IL/HZO interface, validating the proposed mechanism. The model accurately reproduces the trend of thickness-dependent wake-up behavior and reveals additional variability induced by the wake-up process, emphasizing the utmost significance of minimizing the IL in ultrathin HZO devices.",

keywords = "Interfacial layer (IL), soft breakdown, thickness scaling, ultrathin hafnium-zirconium oxide (HZO)",

author = "Cho, {Chen Yi} and Chao, {Tzu Yi} and Lin, {Tzu Yao} and Wang, {I. Ting} and Sourav De and Chen, {Yu Sheng} and Ong, {Yi Ching} and Lin, {Yu De} and Yeh, {Po Chun} and Hou, {Tuo Hung}",

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T1 - Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric Hf0.5 Zr0.5O

T2 - Interfacial Layer Soft Breakdown and Physical Modeling

AU - Cho, Chen Yi

AU - Chao, Tzu Yi

AU - Lin, Tzu Yao

AU - Wang, I. Ting

AU - De, Sourav

AU - Chen, Yu Sheng

AU - Ong, Yi Ching

AU - Lin, Yu De

AU - Yeh, Po Chun

AU - Hou, Tuo Hung

PY - 2024/5/1

Y1 - 2024/5/1

N2 - This article proposes a new mechanism, referred to as interfacial-layer soft breakdown (IL-SBD), to elucidate the intricate wake-up process in the ultrathin ferroelectric (FE) hafnium-zirconium oxide (HZO). Our study provides a comprehensive interpretation and compelling experimental evidence, highlighting the crucial role of the interfacial layer (IL) and its soft breakdown in the wake-up phenomenon. A multidomain FE wake-up model is developed, incorporating defect generation, trap-assisted tunneling (TAT) within the IL, and charge screening at the IL/HZO interface, validating the proposed mechanism. The model accurately reproduces the trend of thickness-dependent wake-up behavior and reveals additional variability induced by the wake-up process, emphasizing the utmost significance of minimizing the IL in ultrathin HZO devices.

AB - This article proposes a new mechanism, referred to as interfacial-layer soft breakdown (IL-SBD), to elucidate the intricate wake-up process in the ultrathin ferroelectric (FE) hafnium-zirconium oxide (HZO). Our study provides a comprehensive interpretation and compelling experimental evidence, highlighting the crucial role of the interfacial layer (IL) and its soft breakdown in the wake-up phenomenon. A multidomain FE wake-up model is developed, incorporating defect generation, trap-assisted tunneling (TAT) within the IL, and charge screening at the IL/HZO interface, validating the proposed mechanism. The model accurately reproduces the trend of thickness-dependent wake-up behavior and reveals additional variability induced by the wake-up process, emphasizing the utmost significance of minimizing the IL in ultrathin HZO devices.

KW - Interfacial layer (IL)

KW - soft breakdown

KW - thickness scaling

KW - ultrathin hafnium-zirconium oxide (HZO)

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DO - 10.1109/TED.2024.3379473

M3 - Article

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SN - 0018-9383

VL - 71

SP - 3365

EP - 3370

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric Hf0.5 Zr0.5O: Interfacial Layer Soft Breakdown and Physical Modeling

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