Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

K. Y. Hsiang; F. S. Chang; Z. F. Lou; A. Aich; A. Senapati; J. Y. Lee; Z. X. Li; J. H. Chen; C. H. Liu; C. W. Liu; S. Maikap; P. Su; T. H. Hou; M. H. Lee

doi:10.1109/TED.2024.3364116

Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

K. Y. Hsiang, F. S. Chang, Z. F. Lou, A. Aich, A. Senapati, J. Y. Lee, Z. X. Li, J. H. Chen, C. H. Liu, C. W. Liu, S. Maikap, P. Su, T. H. Hou, M. H. Lee^*

^*此作品的通信作者

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Asymmetric field cycling recovery (AFCR) with alternating opposite low E -field cycling is proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally demonstrated for up to 1012 switching cycles, thereby extending the endurance of FeRAM. Positive and negative asymmetric minor loops (AmLs) with AFCR exhibit nondegradation and complete restoration of Δ 2P r toward unlimited endurance operation. Furthermore, an FE random access memory (FeRAM) array circuit with an inverting amplifier is designed to simultaneously execute Write/Read and Recovery procedures via the AFCR scheme.

原文	English
頁（從 - 到）	2708-2713
頁數	6
期刊	IEEE Transactions on Electron Devices
卷	71
發行號	4
DOIs	https://doi.org/10.1109/TED.2024.3364116
出版狀態	Published - 1 4月 2024

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10.1109/TED.2024.3364116

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Hsiang, K. Y., Chang, F. S., Lou, Z. F., Aich, A., Senapati, A., Lee, J. Y., Li, Z. X., Chen, J. H., Liu, C. H., Liu, C. W., Maikap, S., Su, P., Hou, T. H., & Lee, M. H. (2024). Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit. IEEE Transactions on Electron Devices, 71(4), 2708-2713. https://doi.org/10.1109/TED.2024.3364116

@article{316891de24074407a876de21ec1ca41c,

title = "Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit",

abstract = "Asymmetric field cycling recovery (AFCR) with alternating opposite low E -field cycling is proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally demonstrated for up to 1012 switching cycles, thereby extending the endurance of FeRAM. Positive and negative asymmetric minor loops (AmLs) with AFCR exhibit nondegradation and complete restoration of Δ 2P r toward unlimited endurance operation. Furthermore, an FE random access memory (FeRAM) array circuit with an inverting amplifier is designed to simultaneously execute Write/Read and Recovery procedures via the AFCR scheme.",

keywords = "Endurance, ferroelectric (FE), recovery",

author = "Hsiang, {K. Y.} and Chang, {F. S.} and Lou, {Z. F.} and A. Aich and A. Senapati and Lee, {J. Y.} and Li, {Z. X.} and Chen, {J. H.} and Liu, {C. H.} and Liu, {C. W.} and S. Maikap and P. Su and Hou, {T. H.} and Lee, {M. H.}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2024",

month = apr,

day = "1",

doi = "10.1109/TED.2024.3364116",

language = "English",

volume = "71",

pages = "2708--2713",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

Hsiang, KY, Chang, FS, Lou, ZF, Aich, A, Senapati, A, Lee, JY, Li, ZX, Chen, JH, Liu, CH, Liu, CW, Maikap, S, Su, P , Hou, TH & Lee, MH 2024, 'Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit', IEEE Transactions on Electron Devices, 卷 71, 編號 4, 頁 2708-2713. https://doi.org/10.1109/TED.2024.3364116

TY - JOUR

T1 - Unleashing Endurance Limits of Emerging Memory

T2 - Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

AU - Hsiang, K. Y.

AU - Chang, F. S.

AU - Lou, Z. F.

AU - Aich, A.

AU - Senapati, A.

AU - Lee, J. Y.

AU - Li, Z. X.

AU - Chen, J. H.

AU - Liu, C. H.

AU - Liu, C. W.

AU - Maikap, S.

AU - Su, P.

AU - Hou, T. H.

AU - Lee, M. H.

PY - 2024/4/1

Y1 - 2024/4/1

N2 - Asymmetric field cycling recovery (AFCR) with alternating opposite low E -field cycling is proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally demonstrated for up to 1012 switching cycles, thereby extending the endurance of FeRAM. Positive and negative asymmetric minor loops (AmLs) with AFCR exhibit nondegradation and complete restoration of Δ 2P r toward unlimited endurance operation. Furthermore, an FE random access memory (FeRAM) array circuit with an inverting amplifier is designed to simultaneously execute Write/Read and Recovery procedures via the AFCR scheme.

AB - Asymmetric field cycling recovery (AFCR) with alternating opposite low E -field cycling is proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally demonstrated for up to 1012 switching cycles, thereby extending the endurance of FeRAM. Positive and negative asymmetric minor loops (AmLs) with AFCR exhibit nondegradation and complete restoration of Δ 2P r toward unlimited endurance operation. Furthermore, an FE random access memory (FeRAM) array circuit with an inverting amplifier is designed to simultaneously execute Write/Read and Recovery procedures via the AFCR scheme.

KW - Endurance

KW - ferroelectric (FE)

KW - recovery

UR - http://www.scopus.com/inward/record.url?scp=85187244257&partnerID=8YFLogxK

U2 - 10.1109/TED.2024.3364116

DO - 10.1109/TED.2024.3364116

M3 - Article

AN - SCOPUS:85187244257

SN - 0018-9383

VL - 71

SP - 2708

EP - 2713

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

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