Uniform resistive switching and highly stable synaptic characteristics of HfOx sandwiched TaOx-based memristor for neuromorphic system

Keyphrases

• Analog Switch 20%
• Asymmetric Oxygen Vacancies 20%
• Brain-inspired Neuromorphic Computing 20%
• Conductive Filament 20%
• Depressive-like Behavior 20%
• Device Behavior 20%
• Endurance Characteristics 20%
• Filament Formation 20%
• Fundamental Building Blocks 20%
• HfOx 100%
• Highly Stable 100%
• Hopfield Neural Network 20%
• Hourglass 20%
• Linear Tuning 20%
• Long-term Depression 20%
• Long-term Potentiation 20%
• Memristor 100%
• Nanoscale Devices 20%
• Neural Network Simulation 20%
• Neural Network Training 20%
• Neuromorphic Computing 20%
• Neuromorphic System 100%
• Paired-pulse Facilitation 20%
• Pattern Recognition 20%
• Pulse Stimulation 20%
• Rapture 20%
• Recognition Accuracy 20%
• Reset Operation 20%
• Resistive Switching 100%
• Sandwich Layer 20%
• Set Voltage 20%
• Set-reset 40%
• Short-term Synaptic Plasticity 20%
• Spatial-temporal 20%
• Stacked Structure 20%
• Switchability 20%
• Switching Uniformity 20%
• Synapse 40%
• Synaptic Characteristics 100%
• Synaptic Device 20%
• Synaptic Function 20%
• TaOx 100%
• Temporal Switching 20%
• Vacancy Distribution 20%
• Voltage Pulse 20%
• Voltage Variation 20%

Engineering

• Building Block 33%
• Conductive Filament 33%
• Device Behavior 33%
• Nanoscale 33%
• Neural Network Training 33%
• Neuromorphic System 100%
• Oxygen Vacancy 33%
• Pattern Recognition 33%
• Recognition Accuracy 33%
• Reset Operation 33%
• Resistive 100%
• Synaptic Device 33%

Material Science

• Neuromorphic Computing 100%
• Oxygen Vacancy 50%
• Pattern Recognition 50%