UNI-MOS: A unified SPICE built-in MOSFET model for circuit simulation and lifetime evaluation

Steve S. Chung*, J. S. Lee, Y. G. Chen, P. C. Hsu

*此作品的通信作者

    研究成果: Paper同行評審

    摘要

    A lightly doped drain (LDD) MOS device model for circuit simulation in SPICE is described. UNIMOS includes a consistent set of DC (I-V), AC (C-V), and hot electron degradation effect models. For the I-V and C-V models, results for achieving accurate and computationally efficient models of both conventional and LDD MOSFETs with submicron channel length are described. Strategies for implementing the hot electron effect in the circuit simulator for predicting the lifetime of a device or circuit in a VLSI environment are demonstrated.

    原文English
    DOIs
    出版狀態Published - 9月 1990
    事件Proceedings of the 3rd Annual IEEE ASIC Seminar and Exhibit - Rochester, NY, USA
    持續時間: 17 9月 199021 9月 1990

    Conference

    ConferenceProceedings of the 3rd Annual IEEE ASIC Seminar and Exhibit
    城市Rochester, NY, USA
    期間17/09/9021/09/90

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