UNI-MOS: A unified SPICE built-in MOSFET model for circuit simulation and lifetime evaluation

Steve S. Chung; J. S. Lee; Y. G. Chen; P. C. Hsu

doi:10.1109/ASIC.1990.186122

UNI-MOS: A unified SPICE built-in MOSFET model for circuit simulation and lifetime evaluation

Steve S. Chung^*, J. S. Lee, Y. G. Chen, P. C. Hsu

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摘要

A lightly doped drain (LDD) MOS device model for circuit simulation in SPICE is described. UNIMOS includes a consistent set of DC (I-V), AC (C-V), and hot electron degradation effect models. For the I-V and C-V models, results for achieving accurate and computationally efficient models of both conventional and LDD MOSFETs with submicron channel length are described. Strategies for implementing the hot electron effect in the circuit simulator for predicting the lifetime of a device or circuit in a VLSI environment are demonstrated.

原文	English
DOIs	https://doi.org/10.1109/ASIC.1990.186122
出版狀態	Published - 9月 1990
事件	Proceedings of the 3rd Annual IEEE ASIC Seminar and Exhibit - Rochester, NY, USA 持續時間: 17 9月 1990 → 21 9月 1990

Conference

Conference	Proceedings of the 3rd Annual IEEE ASIC Seminar and Exhibit
城市	Rochester, NY, USA
期間	17/09/90 → 21/09/90

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10.1109/ASIC.1990.186122

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abstract = "A lightly doped drain (LDD) MOS device model for circuit simulation in SPICE is described. UNIMOS includes a consistent set of DC (I-V), AC (C-V), and hot electron degradation effect models. For the I-V and C-V models, results for achieving accurate and computationally efficient models of both conventional and LDD MOSFETs with submicron channel length are described. Strategies for implementing the hot electron effect in the circuit simulator for predicting the lifetime of a device or circuit in a VLSI environment are demonstrated.",

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N2 - A lightly doped drain (LDD) MOS device model for circuit simulation in SPICE is described. UNIMOS includes a consistent set of DC (I-V), AC (C-V), and hot electron degradation effect models. For the I-V and C-V models, results for achieving accurate and computationally efficient models of both conventional and LDD MOSFETs with submicron channel length are described. Strategies for implementing the hot electron effect in the circuit simulator for predicting the lifetime of a device or circuit in a VLSI environment are demonstrated.

AB - A lightly doped drain (LDD) MOS device model for circuit simulation in SPICE is described. UNIMOS includes a consistent set of DC (I-V), AC (C-V), and hot electron degradation effect models. For the I-V and C-V models, results for achieving accurate and computationally efficient models of both conventional and LDD MOSFETs with submicron channel length are described. Strategies for implementing the hot electron effect in the circuit simulator for predicting the lifetime of a device or circuit in a VLSI environment are demonstrated.

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ER -

UNI-MOS: A unified SPICE built-in MOSFET model for circuit simulation and lifetime evaluation

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