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Ultraviolet photodetecting and plasmon-to-electric conversion of controlled inkjet-printing thin-film transistors
Cheng Jyun Wang
, Hsin Chiang You
, Jen Hung Ou
, Yun Yi Chu
,
Fu-Hsiang Ko
*
*
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引文 斯高帕斯（Scopus）
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Keyphrases
Thin-film Transistors
100%
Photodetector
100%
Inkjet Printing
100%
Visible Light
100%
Channel Structure
100%
Plasmon
100%
Plasmon Energy
100%
Electric Conversion
100%
Photoresponse
50%
Order of Magnitude
50%
Light Detection
50%
Electrical Characteristics
50%
Visible Spectrum
50%
Temperature Effect
50%
Drain Current
50%
ION-IOFF
50%
Gate Bias
50%
Temperature Gradient
50%
Threshold Voltage
50%
Plasmonic Effect
50%
Zinc Oxide
50%
Efficient Conversion
50%
Phototransistor
50%
Photodetection
50%
Channel Width
50%
Electrical Signal
50%
Light Illumination
50%
Oxide-based
50%
Energy Detection
50%
Negative Shift
50%
Inkjet Printing Technique
50%
Junction Structure
50%
Direct Patterning
50%
Oxygen Plasma Treatment
50%
Three-dimensional Channel
50%
Visible Light Sensing
50%
Light Power Density
50%
Metal-semiconductor Junction
50%
Marangoni Flow
50%
Engineering
Ultraviolet Light
100%
Thin-Film Transistor
100%
Inkjet Printing
100%
Channel Structure
50%
Photodetector
25%
Current Drain
25%
Plasma Treatment
25%
Gate Bias
25%
Plasmonics
25%
Power Density
25%
Photodetection
25%
Electrical Signal
25%
Phototransistor
25%
Energy Detection
25%
Metal-Semiconductor Junction
25%
Marangoni Flow
25%
Photometer
25%
Thermal Gradient
25%
Temperature Gradients
25%
Material Science
Thin-Film Transistor
100%
Density
50%
Transistor
50%
Electrical Property
50%
Zinc Oxide
50%
ZnO
50%
Metal-Semiconductor Junction
50%
Chemical Engineering
Film
100%
Thermal Gradient
50%
Zinc Oxide
50%