Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness

Huei Min Huang, Chiao Yun Chang, Yu-Pin Lan, Tien-chang Lu*, Hao-Chung Kuo, Shing Chung Wang

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

The defect-induced carrier localization in nonpolar a-plane (Al,Ga)N/GaN multiple quantum wells (MQWs) structures with different well thickness have been investigated. A strong variation of temperature-dependent photoluminescence peak energy was observed and attributed to the existence of the localized states. The degree of carrier localization in these defect-induced states was more prominent in the case of MQWs with the wider well width. In addition, the ultraviolet light emission efficiency revealed a 3-fold enhancement with increasing the well width from 1.6 nm to 7.3 nm, due to the strong carrier localization generated from the quantum-wire-like features formed by the intersection between basal stacking faults and quantum wells.

原文English
文章編號261901
頁數3
期刊Applied Physics Letters
100
發行號26
DOIs
出版狀態Published - 25 6月 2012

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